Erratum: “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes” [Appl. Phys. Lett. 80, 3817 (2002)]

2002 ◽  
Vol 81 (7) ◽  
pp. 1359-1359 ◽  
Author(s):  
S. J. Wind ◽  
J. Appenzeller ◽  
R. Martel ◽  
V. Derycke ◽  
Ph. Avouris
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Scaling ◽  
Gate Electrodes

Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

2002 ◽  
Vol 80 (20) ◽  
pp. 3817-3819 ◽  
Author(s):  
S. J. Wind ◽  
J. Appenzeller ◽  
R. Martel ◽  
V. Derycke ◽  
Ph. Avouris
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Scaling ◽  
Gate Electrodes

scholarly journals Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

2014 ◽  
Vol 6 (3) ◽  
pp. 287-292 ◽  
Author(s):  
Jingqi Li ◽  
Weisheng Yue ◽  
Zaibing Guo ◽  
Yang Yang ◽  
Xianbin Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors

A compact current-voltage model for carbon nanotube field effect transistors

2008 ◽  
Author(s):  
Hadi Hosseinzadegan ◽  
Hossein Aghababa ◽  
Mahmoud Zangeneh ◽  
Ali Afzali-kusha ◽  
Behjat Forouzandeh
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Current Voltage

scholarly journals High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled
Sign in / Sign up

Export Citation Format

Share Document