Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate

M. Mikulics; A. Fox; M. Marso; D. Grützmacher; D. Donoval; P. Kordoš

doi:10.1016/j.vacuum.2011.07.016

Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate

Vacuum ◽

10.1016/j.vacuum.2011.07.016 ◽

2012 ◽

Vol 86 (6) ◽

pp. 754-756 ◽

Cited By ~ 5

Author(s):

M. Mikulics ◽

A. Fox ◽

M. Marso ◽

D. Grützmacher ◽

D. Donoval ◽

...

Keyword(s):

Structural Characterization ◽

Field Effect ◽

Field Effect Transistors ◽

Recessed Gate

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Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

2016 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2016.7578010 ◽

2016 ◽

Author(s):

Marolop Simanullang ◽

Gde B. M. Wisna ◽

Wei Cao ◽

Koichi Usami ◽

Kaustav Banerjee ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

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Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108079 ◽

2021 ◽

pp. 108079

Author(s):

Dong-Hyeok Son ◽

Terirama Thingujam ◽

Quan Dai ◽

Jeong-Gil Kim ◽

Sorin Cristoloveanu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Fabrication And Characterization

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Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Cited By ~ 103

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Cited By ~ 1

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

Applied Physics Letters ◽

10.1063/1.3696045 ◽

2012 ◽

Vol 100 (12) ◽

pp. 123104 ◽

Cited By ~ 385

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

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Modeling and characterization of photovoltaic and photoconductive effects in insulated-gate field effect transistors under optical excitation

Solid-State Electronics ◽

10.1016/j.sse.2021.108139 ◽

2021 ◽

pp. 108139

Author(s):

Han Bin Yoo ◽

Haesung Kim ◽

Ji Hee Ryu ◽

Jingyu Park ◽

Jong-Ho Bae ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Optical Excitation

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Diamond thin-film recessed gate field-effect transistors fabricated by electron cyclotron resonance plasma etching

IEEE Electron Device Letters ◽

10.1109/55.192795 ◽

1992 ◽

Vol 13 (9) ◽

pp. 462-464 ◽

Cited By ~ 36

Author(s):

S.A. Grot ◽

G.S. Gildenblat ◽

A.R. Badzian

Keyword(s):

Thin Film ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Field Effect ◽

Electron Cyclotron Resonance ◽

Field Effect Transistors ◽

Electron Cyclotron ◽

Diamond Thin Film ◽

Recessed Gate ◽

Resonance Plasma

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Cited By ~ 4

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Secondary Ion

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Characterization of Three-Terminal Junctions Operated as In-Plane Gated Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2010571 ◽

2009 ◽

Vol 56 (2) ◽

pp. 306-311 ◽

Cited By ~ 6

Author(s):

Christian R. Muller ◽

L. Worschech ◽

S. Hofling ◽

A. Forchel

Keyword(s):

Field Effect ◽

Field Effect Transistors

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Fabrication and Characterization of Carbon Nanotube Field-Effect Transistors Using Ferromagnetic Electrodes with Different Coercivities

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.02bd08 ◽

2010 ◽

Vol 49 (2) ◽

pp. 02BD08 ◽

Cited By ~ 9

Author(s):

Mohd Ambri Mohamed ◽

Mohd Asyadi Azam ◽

Eiji Shikoh ◽

Akihiko Fujiwara

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Ferromagnetic Electrodes ◽

Fabrication And Characterization

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