A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode

2017 ◽  
Vol 38 (4) ◽  
pp. 501-504 ◽  
Author(s):  
Jie Ren ◽  
Chao Liu ◽  
Chak Wah Tang ◽  
Kei May Lau ◽  
Johnny K. O. Sin
Keyword(s):  
High Voltage ◽  
Monolithic Integration ◽  
Integration Technology

MEMS Monolithic Integration Technology

2013 ◽  
Vol 562-565 ◽  
pp. 1387-1392
Author(s):  
Zhao Yun Zhang ◽  
Zhi Gui Shi ◽  
Zhen Chuan Yang ◽  
Bo Peng
Keyword(s):  
High Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
High Performance ◽  
Monolithic Integration ◽  
Cmos Process ◽  
Integration Technology ◽  
Integrated Technology ◽  
High Temperature Process

The monolithic integrated technology of MEMS was discussed. First discussed the advantages and difficulties faced by the MEMS monolithic integration technology. Second the features and the process of the mainstream MEMS monolithic integration technology was introduced. And finally put forward a SOI MEMS monolithic integration technology, the technology with no high-temperature process, Post-CMOS integrated solution, compatible with the CMOS process. This technology can achieve high aspect ratio, high-performance micro-inertial devices..

Sign in / Sign up

Export Citation Format

Share Document