The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress

2015 ◽  
Vol 36 (12) ◽  
pp. 1336-1339 ◽  
Author(s):  
Sungju Choi ◽  
Hyeongjung Kim ◽  
Chunhyung Jo ◽  
Hyun-Suk Kim ◽  
Sung-Jin Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Local Electron ◽  
Current Stress ◽  
State Creation

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

scholarly journals Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3149 ◽  
Author(s):  
Sungju Choi ◽  
Jae-Young Kim ◽  
Hara Kang ◽  
Daehyun Ko ◽  
Jihyun Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Oxygen Content ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Current Stress ◽  
Bias Stress ◽  
Self Heating ◽  
Effect Of Oxygen ◽  
Amorphous Ingazno ◽  
Bottom Gate

The effect of oxygen content on current-stress-induced instability was investigated in bottom-gate amorphous InGaZnO (a-IGZO) thin-film transistors. The observed positive threshold voltage shift (ΔVT) was dominated by electron trapping in the gate insulator (GI), whereas it was compensated by donor creation in a-IGZO active regions when both current flows and a high lateral electric field were present. Stress-induced ΔVT increased with increasing oxygen content irrespective of the type of stress because oxygen content influenced GI quality, i.e., higher density of GI electron traps, as well as typical direct current (DC) performance like threshold voltage, mobility, and subthreshold swing. It was also found that self-heating became another important mechanism, especially when the vertical electric field and channel current were the same, independent of the oxygen content. The increased ΔVT with oxygen content under positive gate bias stress, positive gate and drain bias stress, and target current stress was consistently explained by considering a combination of the density of GI electron traps, electric field relaxation, and self-heating-assisted electron trapping.

Current stress metastability in a-Si:H thin film transistors

2004 ◽  
Author(s):  
Afrin Sultana ◽  
Kapil Sakariya ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Current Stress

scholarly journals Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097141 ◽  
Author(s):  
Joonwoo Kim ◽  
Sung Myung ◽  
Hee-Yeon Noh ◽  
Soon Moon Jeong ◽  
Jaewook Jeong
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Current Stress ◽  
Graphene Electrode

Dangling-bond defect state creation in microcrystalline silicon thin-film transistors

2000 ◽  
Vol 77 (5) ◽  
pp. 750-752 ◽  
Author(s):  
R. B. Wehrspohn ◽  
M. J. Powell ◽  
S. C. Deane ◽  
I. D. French ◽  
P. Roca i Cabarrocas
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Defect State ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
State Creation

High current stress effects in amorphous-InGaZnO4 thin-film transistors

2013 ◽  
Vol 102 (2) ◽  
pp. 023503 ◽  
Author(s):  
Mallory Mativenga ◽  
Sejin Hong ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Current ◽  
Current Stress ◽  
Stress Effects
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