High Current Stress-Induced Heating Effects in Thin-Film Transistors on Plastic: Oxide Vs. Ltps

2015 ◽  
Vol 67 (1) ◽  
pp. 73-78 ◽  
Author(s):  
S. Lee ◽  
M. Mativenga ◽  
J. Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Current ◽  
Current Stress ◽  
Heating Effects

High current stress effects in amorphous-InGaZnO4 thin-film transistors

2013 ◽  
Vol 102 (2) ◽  
pp. 023503 ◽  
Author(s):  
Mallory Mativenga ◽  
Sejin Hong ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Current ◽  
Current Stress ◽  
Stress Effects

Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements

2013 ◽  
Vol 34 (11) ◽  
pp. 1403-1405 ◽  
Author(s):  
Andreas Tsormpatzoglou ◽  
Nikolaos A. Hastas ◽  
Forough Mahmoudabadi ◽  
Nackbong Choi ◽  
Miltiadis K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
High Current ◽  
Low Frequency Noise ◽  
Current Stress ◽  
Noise Measurements ◽  
Amorphous Ingazno

Analytical Treatment of Field-Effect Conduction in Polysilicon thin film Transistors

1997 ◽  
Vol 471 ◽  
Author(s):  
W. Eccleston
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Drain Current ◽  
High Current ◽  
Analytical Treatment ◽  
Channel Mobility ◽  
Current Region ◽  
The Relationship

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.

Current stress metastability in a-Si:H thin film transistors

2004 ◽  
Author(s):  
Afrin Sultana ◽  
Kapil Sakariya ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Current Stress

Percolative approach for failure time prediction of thin film interconnects under high current stress

2005 ◽  
Vol 45 (2) ◽  
pp. 391-395 ◽  
Author(s):  
E. Misra ◽  
Md M. Islam ◽  
Mahbub Hasan ◽  
H.C. Kim ◽  
T.L. Alford
Keyword(s):  
Thin Film ◽  
Failure Time ◽  
High Current ◽  
Current Stress ◽  
Time Prediction

scholarly journals Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097141 ◽  
Author(s):  
Joonwoo Kim ◽  
Sung Myung ◽  
Hee-Yeon Noh ◽  
Soon Moon Jeong ◽  
Jaewook Jeong
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Current Stress ◽  
Graphene Electrode

Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric

2020 ◽  
Vol 41 (4) ◽  
pp. 565-568
Author(s):  
Yu-Chieh Chien ◽  
Horacio Londono Ramirez ◽  
Soeren Steudel ◽  
Cedric Rolin ◽  
Ravi Pendurthi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Current

Self-heating effects in polycrystalline silicon thin film transistors

2006 ◽  
Vol 89 (9) ◽  
pp. 093509 ◽  
Author(s):  
Antonio Valletta ◽  
Alessandro Moroni ◽  
Luigi Mariucci ◽  
Alessandra Bonfiglietti ◽  
Guglielmo Fortunato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Self Heating ◽  
Heating Effects
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