scholarly journals Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097141 ◽  
Author(s):  
Joonwoo Kim ◽  
Sung Myung ◽  
Hee-Yeon Noh ◽  
Soon Moon Jeong ◽  
Jaewook Jeong
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Current Stress ◽  
Graphene Electrode

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation

2005 ◽  
Vol 902 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Quartz Substrate ◽  
Drain Current ◽  
Optical Transmittance ◽  
Gate Insulator ◽  
Current Drain

AbstractWe demonstrate transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4-xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as a channel. ITO is also used for the gate, source and drain electrodes. Drain current-drain voltage (ID-VD) characteristics of transparent ITO/BLT ferroelectric-gate TFTs exhibit excellent n-channel transistor operations. On current of 0.35 mA was obtained when the applied gate voltage is 6V. On the other hand, the off current of the device is as low as 10-10A, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization. In addition, drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. Optical transmittance of the fabricated device is greater than 60% including the quartz substrate.

Investigation on mechanism for instability under drain current stress in amorphous Si–In–Zn–O thin-film transistors

2013 ◽  
Vol 527 ◽  
pp. 314-317 ◽  
Author(s):  
Do Hyung Kim ◽  
Hyun Kwang Jung ◽  
Woochul Yang ◽  
Dae Hwan Kim ◽  
Sang Yeol Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Current Stress ◽  
Amorphous Si

scholarly journals Investigations into Current Modulation Mechanisms in Low Operating Voltage Organic Thin Film Transistors and Their Relationship to the Materials Employed

2011 ◽  
Vol 1359 ◽  
Author(s):  
Daniel Elkington ◽  
Xiaojing Zhou ◽  
Warwick Belcher ◽  
Paul Dastoor
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Organic Thin Film Transistors ◽  
Operating Voltage ◽  
Electrical Characteristics ◽  
Organic Thin Film ◽  
Slow Time ◽  
Current Modulation

ABSTRACTSystematic studies have been conducted on the electrical characteristics of poly(3-hexylthiophene)-based organic thin film transistors (OTFTs). The OTFTs have been characterized at low-operating voltages and deductions have been made regarding the current modulation mechanisms involved. Irreproducibility of transfer characteristics in these devices beyond a certain gate voltage, as well as a slow time-dependant component to drain current at certain gate voltages, indicates electrochemical changes occurring in the device during operation. It is hoped that this work can help to improve the understanding of OTFTs of this type and, in turn, their performance in the future.

Electrical and thermal stress analysis of In2O3-Ga2O3-ZnO thin-film transistors

2009 ◽  
Vol 1201 ◽  
Author(s):  
Mami Fujii ◽  
Tomoki Maruyama ◽  
Masahiro Horita ◽  
Kiyoshi Uchiyama ◽  
Ji Sim Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Trap Level ◽  
Density Of State ◽  
Drain Voltage ◽  
Cooling Conditions ◽  
Voltage Stress ◽  
Pressure Water

AbstractDegradation of In2O3-Ga2O3-ZnO (IGZO) thin-film transistors (TFTs)) was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. Joule heating caused by the drain current was observed. We tried to reproduce this degradation of the transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions. And then, we tried to improve the TFT characteristics using high pressure water vapor (HPV) annealing. We also found that the cooling conditions after HPV annealing affect the IGZO TFT characteristics.

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Roles of Gate Voltage and Stress Power in Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

2021 ◽  
pp. 1-5
Author(s):  
Mengjun Du ◽  
Jinfeng Zhao ◽  
Dongli Zhang ◽  
Huaisheng Wang ◽  
Qi Shan ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Self Heating
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