Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
2015 ◽
Vol 36
(12)
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pp. 1277-1280
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2015 ◽
Vol 7
(23)
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pp. 12774-12780
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2019 ◽
Vol 463
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pp. 758-766
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Keyword(s):
Keyword(s):
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2006 ◽
Vol 153
(8)
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pp. F180
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Keyword(s):
Keyword(s):
2012 ◽
Vol 51
(2S)
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pp. 02BA04
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2012 ◽
Vol 51
(2)
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pp. 02BA04
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