scholarly journals Heteroepitaxy of La2O3 and La2–xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

Nano Letters ◽  
2013 ◽  
Vol 13 (2) ◽  
pp. 594-599 ◽  
Author(s):  
Xinwei Wang ◽  
Lin Dong ◽  
Jingyun Zhang ◽  
Yiqun Liu ◽  
Peide D. Ye ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Layer Deposition

Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition

2015 ◽  
Vol 7 (23) ◽  
pp. 12774-12780 ◽  
Author(s):  
Dmitry M. Zhernokletov ◽  
Muhammad A. Negara ◽  
Rathnait D. Long ◽  
Shaul Aloni ◽  
Dennis Nordlund ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Density Reduction ◽  
Layer Deposition

Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition

2019 ◽  
Vol 463 ◽  
pp. 758-766 ◽  
Author(s):  
Iljo Kwak ◽  
Mahmut Kavrik ◽  
Jun Hong Park ◽  
Larry Grissom ◽  
Bernd Fruhberger ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
2D Materials ◽  
Atomic Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Gate Oxides ◽  
Layer Deposition

Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density

2005 ◽  
Vol 86 (11) ◽  
pp. 112907 ◽  
Author(s):  
Jaehoo Park ◽  
Moonju Cho ◽  
Seong Keun Kim ◽  
Tae Joo Park ◽  
Suk Woo Lee ◽  
...  
Keyword(s):  
Dielectric Property ◽  
Oxygen Concentration ◽  
Atomic Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap
Sign in / Sign up

Export Citation Format

Share Document