High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing

2011 ◽  
Vol 32 (12) ◽  
pp. 1656-1658 ◽  
Author(s):  
Qi Xie ◽  
Shaoren Deng ◽  
Marc Schaekers ◽  
Dennis Lin ◽  
Matty Caymax ◽  
...  
Keyword(s):  
High Performance ◽  
Mos Capacitors ◽  
Plasma Passivation

Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors

2019 ◽  
Vol 125 (18) ◽  
pp. 185703 ◽  
Author(s):  
Yunong Sun ◽  
Chao Yang ◽  
Zhipeng Yin ◽  
Fuwen Qin ◽  
Dejun Wang
Keyword(s):  
Voltage Stability ◽  
Mos Capacitors ◽  
Plasma Passivation ◽  
Oxide Traps

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

2008 ◽  
Vol 93 (5) ◽  
pp. 053505 ◽  
Author(s):  
Jaechul Park ◽  
Sangwook Kim ◽  
Changjung Kim ◽  
Sunil Kim ◽  
Ihun Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Plasma Passivation

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

2010 ◽  
Vol 645-648 ◽  
pp. 515-518 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Yuki Oshiro ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Direct Oxidation ◽  
Mos Capacitors

Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.

scholarly journals Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric

2007 ◽  
Vol 2 (2) ◽  
pp. 89-93
Author(s):  
Katia F. Albertin ◽  
M. A. Valle ◽  
I. Pereyra
Keyword(s):  
Dielectric Constant ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
High Performance ◽  
Oxide Thickness ◽  
Effective Dielectric Constant ◽  
Tio2 Films ◽  
Interface Quality ◽  
Mos Capacitors

MOS capacitors with TiO2 and TiO2/SiO2 dielectric layer were fabricated and characterized. TiO2 films where physical characterized by Rutherford Backscattering, Fourier TransformInfrared Spectroscopy and Elipsometry measurements. Capacitance-voltage (1MHz) and current voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness (EOT), leakage current density and interface quality. The results show that the obtained TiO2 films present a dielectric constant of approximately 40, a good interface quality with silicon and a leakage current density, of 70 mA/cm2 for VG = 1V, acceptable for high performance logic circuits and low power circuits fabrication, indicating that this material is a viable substitute for current dielectric layers in order to prevent tunneling currents.

Surface Treatment of 4H-SiC MOSFETs Prior to Al2O3 Deposition

2020 ◽  
Vol 1004 ◽  
pp. 541-546
Author(s):  
Muhammad Idzdihar Idris ◽  
Alton B. Horsfall
Keyword(s):  
Surface Treatment ◽  
Field Effect ◽  
High Performance ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Surface Treatments ◽  
Flat Band ◽  
Field Effect Mobility ◽  
Mos Capacitors

The effect of surface treatments prior to the deposition of Al2O3 is performed on 4H-SiC MOS capacitors and MOSFETs. 40 nm of Al2O3 were deposited on 4H-SiC using atomic layer deposition (ALD) as a gate dielectric. Different surface treatments were used to investigate the capacitance-voltage and current-voltage characteristics on MOS capacitors and MOSFETs respectively, including the important parameters such as interface state density, flat band voltage, threshold voltage and field-effect mobility. Forming gas annealing and rapid oxidation processes were found to be effective in reducing the interface state density and results in high field-effect mobility with peak field-effect mobility of 130 cm2Vs-1. The experimental results obtained manifest that the surface treatment prior to Al2O3 deposition is critical to producing high performance of 4H-SiC MOSFETs.

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications

2017 ◽  
Vol 897 ◽  
pp. 327-330
Author(s):  
Sandip Kumar Roy ◽  
Jesus Urresti Ibanez ◽  
Anthony G. O’Neill ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Silicon Nitride ◽  
High Performance ◽  
Ohmic Contacts ◽  
Surface Characteristics ◽  
Harsh Environments ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Mos Devices ◽  
High K ◽  
Mos Structures

Oxygen free Ohmic contacts are essential for the realisation of high performance devices. Ohmic contacts in SiC often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the electrical and surface characteristics. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOS structures. In order to prevent damage during the high-k formation the use of silicon nitride as a passivation layer, capable of protecting the contacts during annealing, has been investigated. In this work we have investigated and compared silicon nitride protected high-κ dielectric SiC based MOS capacitors with the unprotected SiC MOS devices in terms of electrical and optical characteristics.

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