High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

2008 ◽  
Vol 93 (5) ◽  
pp. 053505 ◽  
Author(s):  
Jaechul Park ◽  
Sangwook Kim ◽  
Changjung Kim ◽  
Sunil Kim ◽  
Ihun Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Plasma Passivation

Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

2017 ◽  
Vol 136 ◽  
pp. 43-50 ◽  
Author(s):  
Yang Song ◽  
Alexander Katsman ◽  
Amy L. Butcher ◽  
David C. Paine ◽  
Alexander Zaslavsky
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Voltage Stress

scholarly journals Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-9 ◽  
Author(s):  
Kuankuan Lu ◽  
Rihui Yao ◽  
Wei Xu ◽  
Honglong Ning ◽  
Xu Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Flexible Substrate ◽  
Pure Copper ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Enhancement Mode ◽  
Indium Zinc Oxide

Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology. The effect of a Cu-Cr-Zr (CCZ) copper alloy source/drain (S/D) electrode on flexible amorphous neodymium-doped indium-zinc-oxide thin-film transistors (NdIZO-TFTs) was investigated. Compared with pure copper (Cu) and aluminum (Al) S/D electrodes, the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode, which is ascribed to the alloy-assisted interface layer besides work function matching. X-ray photoelectron spectroscopy (XPS) depth profile analysis was conducted to examine the chemical states of the contact interface, and the result suggested that chromium (Cr) oxide and zirconium (Zr) oxide aggregate at the interface between the S/D electrode and the active layer, acting as a potential barrier against residual free electron carriers. The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility (μsat) of 40.3 cm2·V-1·s-1, an Ion/Ioff ratio of 1.24×108, a subthreshold swing (SS) value of 0.12 V·decade-1, and a threshold voltage (Vth) of 0.83 V. This work is anticipated to provide a novel approach to the realization of high-performance flexible NdIZO-TFTs working in enhancement mode.

High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique

2011 ◽  
Vol 99 (25) ◽  
pp. 253501 ◽  
Author(s):  
Hua Xu ◽  
Linfeng Lan ◽  
Miao Xu ◽  
Jianhua Zou ◽  
Lei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide
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