Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors

2019 ◽  
Vol 125 (18) ◽  
pp. 185703 ◽  
Author(s):  
Yunong Sun ◽  
Chao Yang ◽  
Zhipeng Yin ◽  
Fuwen Qin ◽  
Dejun Wang
Keyword(s):  
Voltage Stability ◽  
Mos Capacitors ◽  
Plasma Passivation ◽  
Oxide Traps

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

2015 ◽  
Vol 62 (8) ◽  
pp. 2670-2674 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Jisheng Han ◽  
Daniel Haasmann ◽  
Amirhossein Aminbeidokhti
Keyword(s):  
Current Method ◽  
Transient Current ◽  
Mos Capacitors ◽  
Oxide Traps

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1007-1010 ◽  
Author(s):  
Daniel B. Habersat ◽  
Aivars J. Lelis ◽  
G. Lopez ◽  
J.M. McGarrity ◽  
F. Barry McLean
Keyword(s):  
Room Temperature ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Interface Charges ◽  
Flatband Voltage ◽  
Oxide Traps ◽  
P Type

We have investigated the distribution of oxide traps and interface traps in 4H Silicon Carbide MOS devices. The density of interface traps, Dit, was characterized using standard C-V techniques on capacitors and charge pumping on MOSFETs. The number of oxide traps, NOT, was then calculated by measuring the flatband voltage VFB in p-type MOS capacitors. The amount that the measured flatband voltage shifts from ideal, minus the contributions due to the number of filled interface traps Nit, gives an estimate for the number of oxide charges present. We found Dit to be in the low 1011cm−2eV−1 range in midgap and approaching 1012 −1013cm−2eV−1 near the band edges. This corresponds to an Nit of roughly 2.5 ⋅1011cm−2 for a typical capacitor in flatband at room temperature. This data combined with measurements of VFB indicates the presence of roughly 1.3 ⋅1012cm−2 positive NOT charges in the oxide near the interface for our samples.

A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

2015 ◽  
Vol 62 (3) ◽  
pp. 813-820 ◽  
Author(s):  
Yuan Taur ◽  
Han-Ping Chen ◽  
Qian Xie ◽  
Jaesoo Ahn ◽  
Paul C. McIntyre ◽  
...  
Keyword(s):  
Interface States ◽  
Band Model ◽  
Mos Capacitors ◽  
Oxide Traps ◽  
Two Band Model

Deep Neutral Oxide Traps Near Midgap at Corners of Nonplanar MOS-Capacitors

1999 ◽  
Author(s):  
T. Ono ◽  
M. Miura-Mattausch ◽  
H. Baumgaertner ◽  
H. J. Mattausch
Keyword(s):  
Mos Capacitors ◽  
Oxide Traps

Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors

2020 ◽  
Vol 531 ◽  
pp. 147312
Author(s):  
Zhipeng Yin ◽  
Chao Yang ◽  
Fanglong Zhang ◽  
Yan Su ◽  
Fuwen Qin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Voltage Stability ◽  
Mos Capacitors ◽  
Interface Defects

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C – V curve for MOS capacitors

2016 ◽  
Vol 25 (11) ◽  
pp. 118502 ◽  
Author(s):  
Han-Han Lu ◽  
Jing-Ping Xu ◽  
Lu Liu ◽  
Pui-To Lai ◽  
Wing-Man Tang
Keyword(s):  
Frequency Dispersion ◽  
Mos Capacitors ◽  
Capacitance Model ◽  
Oxide Traps

Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors

2016 ◽  
Vol 858 ◽  
pp. 603-606 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Ji Sheng Han ◽  
Amirhossein Aminbeidokhti ◽  
Daniel Haasmann
Keyword(s):  
Conduction Band ◽  
Threshold Voltage ◽  
Energy Levels ◽  
New Method ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Voltage Instability ◽  
Capacitance Voltage ◽  
Oxide Traps

This paper presents a new method to quantify near interface oxide traps (NIOTs) that are responsible for threshold voltage instability of 4H-SiC MOSFETs. The method utilizes the shift observed in capacitance–voltage (C–V) curves of an N-type MOS capacitor. The results show that both shallow NIOTs with energy levels below the bottom of conduction band and NIOTs with energy levels above the bottom of the conduction band of SiC are responsible for the C–V shifts, and consequently, for the threshold voltage instabilities in MOSFETs. A higher density of NIOTs is measured at higher temperatures.

High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing

2011 ◽  
Vol 32 (12) ◽  
pp. 1656-1658 ◽  
Author(s):  
Qi Xie ◽  
Shaoren Deng ◽  
Marc Schaekers ◽  
Dennis Lin ◽  
Matty Caymax ◽  
...  
Keyword(s):  
High Performance ◽  
Mos Capacitors ◽  
Plasma Passivation
Sign in / Sign up

Export Citation Format

Share Document