Accurate Model for the Threshold Voltage Fluctuation Estimation in 45-nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants

Nabil Ashraf; Dragica Vasileska; Gilson Wirth; P. Srinivasan

doi:10.1109/led.2011.2158287

Accurate Model for the Threshold Voltage Fluctuation Estimation in 45-nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants

IEEE Electron Device Letters ◽

10.1109/led.2011.2158287 ◽

2011 ◽

Vol 32 (8) ◽

pp. 1044-1046 ◽

Cited By ~ 8

Author(s):

Nabil Ashraf ◽

Dragica Vasileska ◽

Gilson Wirth ◽

P. Srinivasan

Keyword(s):

Threshold Voltage ◽

Channel Length ◽

Voltage Fluctuation ◽

Accurate Model ◽

Random Dopants ◽

Random Traps

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Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants

2011 11th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2011.6144308 ◽

2011 ◽

Cited By ~ 3

Author(s):

Nabil Ashraf ◽

Dragica Vasileska ◽

Gilson Wirth ◽

Srinivasan Purushothaman

Keyword(s):

Comparative Analysis ◽

Threshold Voltage ◽

Channel Length ◽

Voltage Fluctuations ◽

Random Dopants ◽

Random Traps

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Comparative Analysis of Mobility and Dopant Number Fluctuation Models for the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET Device

Nanoelectronic Device Applications Handbook ◽

10.1201/b15035-2 ◽

2017 ◽

pp. 15-26

Author(s):

Nabil Ashraf ◽

Dragica Vasileska ◽

Gilson Wirth ◽

Purushothaman Srinivasan

Keyword(s):

Comparative Analysis ◽

Threshold Voltage ◽

Channel Length ◽

Voltage Fluctuation

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Back gate engineering for suppression of threshold voltage fluctuation in fully-depleted SOI MOSFETs

2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) ◽

10.1109/soi.2000.892778 ◽

2002 ◽

Author(s):

T. Numata ◽

M. Noguchi ◽

Y. Oowaki ◽

S. Takagi

Keyword(s):

Threshold Voltage ◽

Voltage Fluctuation ◽

Back Gate ◽

Fully Depleted ◽

Gate Engineering

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Channel Length-Dependent Charge Detrapping on Threshold Voltage Shift of Amorphous InGaZnO TFTs Under Dynamic Bias Stress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2253466 ◽

2013 ◽

Vol 60 (5) ◽

pp. 1689-1694 ◽

Cited By ~ 5

Author(s):

Suehye Park ◽

Edward Namkyu Cho ◽

Ilgu Yun

Keyword(s):

Threshold Voltage ◽

Channel Length ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Bias Stress ◽

Amorphous Ingazno ◽

Dynamic Bias

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A new method to determine effective channel length, series resistance and threshold voltage

Proceedings of International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1996.535635 ◽

2002 ◽

Cited By ~ 5

Author(s):

M. Sasaki ◽

H. Ito ◽

T. Horiuchi

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Channel Length ◽

New Method ◽

Effective Channel

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Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/16.333844 ◽

1994 ◽

Vol 41 (11) ◽

pp. 2216-2221 ◽

Cited By ~ 422

Author(s):

T. Mizuno ◽

J. Okumtura ◽

A. Toriumi

Keyword(s):

Experimental Study ◽

Threshold Voltage ◽

Voltage Fluctuation ◽

Statistical Variation

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Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901721 ◽

2019 ◽

Cited By ~ 1

Author(s):

Alexander Makarov ◽

Dimitri Linten ◽

Stanislav Tyaginov ◽

Ben Kaczer ◽

Philippe Roussel ◽

...

Keyword(s):

Stochastic Modeling ◽

Hot Carrier ◽

Random Dopants ◽

The Impact ◽

Random Traps ◽

Hot Carrier Degradation

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Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET devices at low gamma ray radiation doses

IEEE Transactions on Nuclear Science ◽

10.1109/23.914462 ◽

2000 ◽

Vol 47 (6) ◽

pp. 1872-1878 ◽

Cited By ~ 22

Author(s):

B. Djezzar ◽

A. Smatti ◽

A. Amrouche ◽

M. Kechouane

Keyword(s):

Threshold Voltage ◽

Gamma Ray ◽

Channel Length ◽

Radiation Doses ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Radiation Induced

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Threshold voltage dependence on channel length in small geometry MOSFETs

phys stat sol (a) ◽

10.1002/pssa.2210990136 ◽

1987 ◽

Vol 99 (1) ◽

pp. 303-308 ◽

Cited By ~ 1

Author(s):

A. Srivastava

Keyword(s):

Threshold Voltage ◽

Voltage Dependence ◽

Channel Length

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Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.6195 ◽

2012 ◽

Vol 12 (6) ◽

pp. 4485-4488 ◽

Cited By ~ 3

Author(s):

Yiming Li ◽

Hui-Wen Cheng ◽

Chi-Hong Hwang

Keyword(s):

Work Function ◽

Threshold Voltage ◽

Voltage Fluctuation

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