Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

1994 ◽  
Vol 41 (11) ◽  
pp. 2216-2221 ◽  
Author(s):  
T. Mizuno ◽  
J. Okumtura ◽  
A. Toriumi
Keyword(s):  
Experimental Study ◽  
Threshold Voltage ◽  
Voltage Fluctuation ◽  
Statistical Variation

Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

2012 ◽  
Vol 101 (1) ◽  
pp. 013503 ◽  
Author(s):  
Masahiro Hori ◽  
Keigo Taira ◽  
Akira Komatsubara ◽  
Kuninori Kumagai ◽  
Yukinori Ono ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Fluctuation

Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor

2009 ◽  
Vol 30 (3) ◽  
pp. 243-245 ◽  
Author(s):  
Hsing-Hui Hsu ◽  
Horng-Chih Lin ◽  
Leng Chan ◽  
Tiao-Yuan Huang
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Voltage Fluctuation ◽  
Si Nanowire ◽  
Effect Transistor
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