Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

2011 ◽  
Vol 32 (7) ◽  
pp. 862-864 ◽  
Author(s):  
Brian E. Coss ◽  
Casey Smith ◽  
Wei-Yip Loh ◽  
Prashant Majhi ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Modulation Method ◽  
Resistance Reduction

Schottky barrier height tuning using P+ DSS for NMOS contact resistance reduction

2012 ◽  
Author(s):  
Fareen Adeni Khaja ◽  
K. V. Rao ◽  
Chi-Nung Ni ◽  
Shankar Muthukrishnan ◽  
Jianxin Lei ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Resistance Reduction

Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

2011 ◽  
Vol 99 (10) ◽  
pp. 102108 ◽  
Author(s):  
Brian E. Coss ◽  
Wei-Yip Loh ◽  
Herman Carlo Floresca ◽  
Moon J. Kim ◽  
Prashant Majhi ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Contact Resistance ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Atomic Layer ◽  
Resistance Reduction

The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures

2010 ◽  
Vol 96 (5) ◽  
pp. 052514 ◽  
Author(s):  
Donkoun Lee ◽  
Shyam Raghunathan ◽  
Robert J. Wilson ◽  
Dmitri E. Nikonov ◽  
Krishna Saraswat ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Fermi Level Pinning

Electrical and Microstructural Characteristics of Ti Contacts on (001)Si

1992 ◽  
Vol 260 ◽  
Author(s):  
H. R. Liauh ◽  
M. C. Chen ◽  
J. F. Chen ◽  
L. J. Chen
Keyword(s):  
Contact Resistance ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Microstructural Characteristics ◽  
Amorphous Interlayer

ABSTRACTAn investigation of the electrical and microstructural characteristics of the Ti contact on silicon has been carried out. The presence of As in Ti/n+-Si samples was found to retard the formation of poly crystalline silicides compared with that in Ti/p+-Si samples with BF2+ implantation. The variations of Schottky barrier height, contact resistance and junction leakage current were correlated with microstrucxtural changes. The influences of the formation of amorphous interlayer between Ti and Si on the elctrical characteristics are discussed.

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