Electrical and Microstructural Characteristics of Ti Contacts on (001)Si

1992 ◽  
Vol 260 ◽  
Author(s):  
H. R. Liauh ◽  
M. C. Chen ◽  
J. F. Chen ◽  
L. J. Chen
Keyword(s):  
Contact Resistance ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Microstructural Characteristics ◽  
Amorphous Interlayer

ABSTRACTAn investigation of the electrical and microstructural characteristics of the Ti contact on silicon has been carried out. The presence of As in Ti/n+-Si samples was found to retard the formation of poly crystalline silicides compared with that in Ti/p+-Si samples with BF2+ implantation. The variations of Schottky barrier height, contact resistance and junction leakage current were correlated with microstrucxtural changes. The influences of the formation of amorphous interlayer between Ti and Si on the elctrical characteristics are discussed.

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

2011 ◽  
Vol 32 (7) ◽  
pp. 862-864 ◽  
Author(s):  
Brian E. Coss ◽  
Casey Smith ◽  
Wei-Yip Loh ◽  
Prashant Majhi ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Modulation Method ◽  
Resistance Reduction

The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures

2010 ◽  
Vol 96 (5) ◽  
pp. 052514 ◽  
Author(s):  
Donkoun Lee ◽  
Shyam Raghunathan ◽  
Robert J. Wilson ◽  
Dmitri E. Nikonov ◽  
Krishna Saraswat ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Fermi Level Pinning

scholarly journals High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

2019 ◽  
Vol 9 (8) ◽  
pp. 1587
Author(s):  
Rahimah Mohd Saman ◽  
Sharaifah Kamariah Wan Sabli ◽  
Mohd Rofei Mat Hussin ◽  
Muhammad Hilmi Othman ◽  
Muhammad Aniq Shazni Mohammad Haniff ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Barrier Layer ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Measurement Data ◽  
Industrial Sectors

Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

Schottky Barrier Height for the Photo Leakage Current Transformation of a-Si:H TFTs

2007 ◽  
Vol 10 (10) ◽  
pp. J123 ◽  
Author(s):  
M. C. Wang ◽  
T. C. Chang ◽  
Po-Tsun Liu ◽  
Y. Y. Li ◽  
R. W. Xiao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height
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