Turn-Around Effect of $V_{\rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $\hbox{HfO}_{x}\hbox{N}_{y}$ Gate Dielectrics

Hyung-Suk Jung; Sang-Ho Rha; Hyo Kyeom Kim; Jeong Hwan Kim; Seok-Jun Won; Joohwi Lee; Sang Young Lee; Cheol Seong Hwang; Jung-Min Park; Weon-Hong Kim; Min-Woo Song; Nae-In Lee

doi:10.1109/led.2010.2078792

Turn-Around Effect of $V_{\rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $\hbox{HfO}_{x}\hbox{N}_{y}$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2010.2078792 ◽

2010 ◽

Vol 31 (12) ◽

pp. 1479-1481 ◽

Cited By ~ 5

Author(s):

Hyung-Suk Jung ◽

Sang-Ho Rha ◽

Hyo Kyeom Kim ◽

Jeong Hwan Kim ◽

Seok-Jun Won ◽

...

Keyword(s):

Gate Dielectrics ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Type Transistor

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Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Microelectronics Reliability ◽

10.1016/j.microrel.2010.01.012 ◽

2010 ◽

Vol 50 (5) ◽

pp. 614-617 ◽

Cited By ~ 7

Author(s):

H.W. Chen ◽

C.H. Liu

Keyword(s):

Gate Dielectrics ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dd01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DD01 ◽

Cited By ~ 1

Author(s):

Motoyuki Sato ◽

Toshihide Nabatame ◽

Takayuki Aoyama ◽

Yasuo Nara ◽

Yuzuru Ohji

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Time Dependent ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Cited By ~ 1

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

Microelectronic Engineering ◽

10.1016/j.mee.2005.04.055 ◽

2005 ◽

Vol 80 ◽

pp. 130-133 ◽

Cited By ~ 29

Author(s):

F. Crupi ◽

C. Pace ◽

G. Cocorullo ◽

G. Groeseneken ◽

M. Aoulaiche ◽

...

Keyword(s):

Gate Dielectrics ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3078540 ◽

2021 ◽

pp. 1-1

Author(s):

Rui Gao ◽

Jigang Ma ◽

Xiaoling Lin ◽

Xiaowen Zhang ◽

Yunfei En ◽

...

Keyword(s):

Comparative Study ◽

Positive Bias ◽

Gate Stack ◽

Temperature Instability ◽

Bias Temperature Instability

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Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796085 ◽

2008 ◽

Cited By ~ 2

Author(s):

D.P. Ioannou ◽

S. Mittl ◽

G. LaRosa

Keyword(s):

Positive Bias ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2021.3134902 ◽

2021 ◽

pp. 1-1

Author(s):

Yen-Pu Chen ◽

Mengwei Si ◽

Bikram Kishore Mahajan ◽

Zehao Lin ◽

Peide D. Ye ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Positive Bias ◽

Temperature Instability ◽

Hot Carrier ◽

Bias Temperature Instability ◽

Hot Carrier Degradation

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Abnormal Positive Bias Temperature Instability induced by Dipole Doped N-type MOSCAP

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2932603 ◽

2019 ◽

pp. 1-1

Author(s):

Fu-Yuan Jin ◽

Ting-Chang Chang ◽

Chien-Yu Lin ◽

Jih-Chien Liao ◽

Fong-Min Ciou ◽

...

Keyword(s):

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO[sub x]N[sub y] Gate Dielectrics

Electrochemical and Solid-State Letters ◽

10.1149/1.3456518 ◽

2010 ◽

Vol 13 (9) ◽

pp. G71 ◽

Cited By ~ 5

Author(s):

Hyung-Suk Jung ◽

Jung-Min Park ◽

Hyo Kyeom Kim ◽

Jeong Hwan Kim ◽

Seok-Jun Won ◽

...

Keyword(s):

Gate Dielectrics ◽

Temperature Instability ◽

Bias Temperature Instability

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