4H-SiC normally-off vertical junction field-effect transistor with high current density

2003 ◽  
Vol 24 (7) ◽  
pp. 463-465 ◽  
Author(s):  
K. Tone ◽  
J.H. Zhao ◽  
L. Fursin ◽  
P. Alexandrov ◽  
M. Weiner
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Current Density ◽  
High Current ◽  
Effect Transistor

High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer

2007 ◽  
Vol 90 (14) ◽  
pp. 142111 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Shun-Hau Koa ◽  
Chih-Yuan Chan ◽  
Shawn S. H. Hsu ◽  
Hong-Mao Lee ◽  
...  
Keyword(s):  
Current Density ◽  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
High Current Density ◽  
High Current ◽  
Effect Transistor

A facile route to a high-quality graphene/MoS2 vertical field-effect transistor with gate-modulated photocurrent response

2017 ◽  
Vol 5 (9) ◽  
pp. 2337-2343 ◽  
Author(s):  
M. Farooq Khan ◽  
M. Arslan Shehzad ◽  
M. Zahir Iqbal ◽  
M. Waqas Iqbal ◽  
Ghazanfar Nazir ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Current Density ◽  
High Current ◽  
Vertical Field ◽  
Clean Interface ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Facile Route

MoS2 was directly transferred to graphene, which produced a clean interface between graphene and MoS2. A high current ON–OFF ratio of ∼106 was demonstrated with a high current density of ∼105 A cm−2.

High Current Density SmTiO3/SrTiO3 Field-Effect Transistors

2020 ◽  
Vol 2 (2) ◽  
pp. 510-516
Author(s):  
Hareesh Chandrasekar ◽  
Kaveh Ahadi ◽  
Towhidur Razzak ◽  
Susanne Stemmer ◽  
Siddharth Rajan
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current

scholarly journals Portable Immunosensor Based on Extended Gate—Field Effect Transistor for Rapid, Sensitive Detection of Cancer Markers

Proceedings ◽  
2019 ◽  
Vol 15 (1) ◽  
pp. 32
Author(s):  
Baldacchini ◽  
Bizzarri ◽  
Montanarella ◽  
Pascali ◽  
Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
High Current ◽  
Sensor Device ◽  
Current Variation ◽  
Gate Potential ◽  
Effect Transistor

We present an immunosensor for the rapid and sensitive detection of the p53 oncosuppressor protein and of its mutated form p53R175H, which are both valuable cancer biomarkers. The sensor is based on the accurate measurement of the source-drain current variation of a metal oxide semiconductor field-effect transistor, as due to the gate potential changing arising from charge release upon the selective capture of a biomarker by the partner immobilized on a sensing surface connected to the gate electrode. A suitable microelectronic system is implemented to combine high current resolution, which is needed to be competitive with standard immunoassays, with compact dimensions of the final sensor device.

High-power Organic Field-effect Transistors Using a Three-dimensional Structure

2010 ◽  
Vol 1270 ◽  
Author(s):  
M. Uno ◽  
Yuri Hirose ◽  
Kengo Nakayama ◽  
Takafumi Uemura ◽  
Yasuhiro Nakazawa ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Three Dimensional ◽  
Columnar Structure ◽  
Dimensional Structure ◽  
High Current ◽  
Organic Field Effect Transistors ◽  
Switching Speed

AbstractThree-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 200 ns are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

scholarly journals High current density InAsSb/GaSb tunnel field effect transistors

2012 ◽  
Author(s):  
Anil W. Dey ◽  
B. Mattias Borg ◽  
Bahram Ganjipour ◽  
Martin Ek ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current
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