High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer

2007 ◽  
Vol 90 (14) ◽  
pp. 142111 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Shun-Hau Koa ◽  
Chih-Yuan Chan ◽  
Shawn S. H. Hsu ◽  
Hong-Mao Lee ◽  
...  
Keyword(s):  
Current Density ◽  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
High Current Density ◽  
High Current ◽  
Effect Transistor

4H-SiC normally-off vertical junction field-effect transistor with high current density

2003 ◽  
Vol 24 (7) ◽  
pp. 463-465 ◽  
Author(s):  
K. Tone ◽  
J.H. Zhao ◽  
L. Fursin ◽  
P. Alexandrov ◽  
M. Weiner
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Current Density ◽  
High Current ◽  
Effect Transistor

A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Nano Research ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 3421-3429 ◽  
Author(s):  
Nguyen Minh Triet ◽  
Tran Quang Trung ◽  
Nguyen Thi Dieu Hien ◽  
Saqib Siddiqui ◽  
Do-Il Kim ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Effect Transistor

scholarly journals Fabrication of Flexible Organic Field Effect Transistor Constructed with a Polymer Gate Dielectric Layer

Shinku ◽  
2006 ◽  
Vol 49 (3) ◽  
pp. 168-170
Author(s):  
Yonglong JIN ◽  
Shizuyasu OCHIAI ◽  
Goro SAWA ◽  
Yoshiyuki UCHIDA ◽  
Kenzo KOJIMA ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Performance of organic field effect transistor constructed with polycarbonate gate dielectric layer

2006 ◽  
Author(s):  
Shizuyasu Ochiai ◽  
Qiang Zhang ◽  
Yoshiyuki Uchida ◽  
Asao Ohashi ◽  
Kenzo Kojima ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

A facile route to a high-quality graphene/MoS2 vertical field-effect transistor with gate-modulated photocurrent response

2017 ◽  
Vol 5 (9) ◽  
pp. 2337-2343 ◽  
Author(s):  
M. Farooq Khan ◽  
M. Arslan Shehzad ◽  
M. Zahir Iqbal ◽  
M. Waqas Iqbal ◽  
Ghazanfar Nazir ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Current Density ◽  
High Current ◽  
Vertical Field ◽  
Clean Interface ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Facile Route

MoS2 was directly transferred to graphene, which produced a clean interface between graphene and MoS2. A high current ON–OFF ratio of ∼106 was demonstrated with a high current density of ∼105 A cm−2.

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

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