High Current Density SmTiO3/SrTiO3 Field-Effect Transistors

2020 ◽  
Vol 2 (2) ◽  
pp. 510-516
Author(s):  
Hareesh Chandrasekar ◽  
Kaveh Ahadi ◽  
Towhidur Razzak ◽  
Susanne Stemmer ◽  
Siddharth Rajan
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current

High-power Organic Field-effect Transistors Using a Three-dimensional Structure

2010 ◽  
Vol 1270 ◽  
Author(s):  
M. Uno ◽  
Yuri Hirose ◽  
Kengo Nakayama ◽  
Takafumi Uemura ◽  
Yasuhiro Nakazawa ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Three Dimensional ◽  
Columnar Structure ◽  
Dimensional Structure ◽  
High Current ◽  
Organic Field Effect Transistors ◽  
Switching Speed

AbstractThree-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 200 ns are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

scholarly journals High current density InAsSb/GaSb tunnel field effect transistors

2012 ◽  
Author(s):  
Anil W. Dey ◽  
B. Mattias Borg ◽  
Bahram Ganjipour ◽  
Martin Ek ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current

scholarly journals High Current Density Electrical Breakdown of TiS3Nanoribbon-Based Field-Effect Transistors

2017 ◽  
Vol 27 (13) ◽  
pp. 1605647 ◽  
Author(s):  
Aday J. Molina-Mendoza ◽  
Joshua O. Island ◽  
Wendel S. Paz ◽  
Jose Manuel Clamagirand ◽  
Jose Ramón Ares ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Breakdown ◽  
High Current Density ◽  
High Current

High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer

2007 ◽  
Vol 90 (14) ◽  
pp. 142111 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Shun-Hau Koa ◽  
Chih-Yuan Chan ◽  
Shawn S. H. Hsu ◽  
Hong-Mao Lee ◽  
...  
Keyword(s):  
Current Density ◽  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
High Current Density ◽  
High Current ◽  
Effect Transistor

AlGaN/GaN Heterostructure Field-Effect Transistors with Back-Doping Design for High-Power Applications: High Current Density with High Transconductance Characteristics

2002 ◽  
Vol 743 ◽  
Author(s):  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Tadashi Saitoh ◽  
Takehiko Tawara ◽  
Naoki Kobayashi
Keyword(s):  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Algan Barrier Layer ◽  
Gan Heterostructure ◽  
High Transconductance

ABSTRACTElectron transport properties and DC device characteristics have been examined in the AlGaN/GaN heterostructure field-effect transistors (HFETs) with back-doping design that makes it possible to obtain high two-dimensional electron gas (2DEG) densities even for the devices with thin AlGaN barrier layers. In the back-doping design, an asymmetric double-heterostructure is employed, and donor atoms are doped not only in the surface-side AlGaN layer but also in the underlying AlGaN layer. In this structure, electrons are efficiently supplied also from the back-doped AlGaN barrier layer to the GaN channel and merged into a single 2DEG layer, with the help of the negative polarization charges at the heterointerface between the GaN channel and the underlying AlGaN barrier layer. By using back-doping design, very high 2DEG densities around 3×1013 cm−2 has been achieved in the Al0.3Ga0.7N/GaN HFET whose barrier layer (Al0.3Ga0.7N) is designed to be as thin as 120 Å. An HFET with the gate-length of 1.5 μm has exhibited a high current density of 1.2 A/mm and a high transconductance of 200 mS/mm, which is ascribed to high 2DEG densities and thin barrier layers in these devices. HFETs with the back-doping design are thus promising for high-power applications.

10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors

2006 ◽  
Vol 527-529 ◽  
pp. 1187-1190 ◽  
Author(s):  
Yu Zhu Li ◽  
Petre Alexandrov ◽  
Jian Hui Zhang ◽  
Larry X. Li ◽  
Jian Hui Zhao
Keyword(s):  
High Temperature ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Gate Oxide ◽  
High Current ◽  
Oxide Reliability ◽  
Blocking Voltage ◽  
Junction Field Effect Transistors

SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperature applications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET) does not require epi-regrowth and is capable of high current density. In this work we demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. The corresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON) of 124m7cm2, and VB of 10kV and RSP_ON of 87m7cm2. A record-high value for VB 2/RSP_ON of 1149MW/cm2 was achieved for normally-off SiC FETs.

HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs ON SAPPHIRE

2009 ◽  
Vol 19 (01) ◽  
pp. 129-135
Author(s):  
JUNXIA SHI ◽  
M. POPHRISTIC ◽  
L. F. EASTMAN
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Design Parameters ◽  
Gate Length ◽  
High Current ◽  
Theoretical Limit ◽  
Power Switching ◽  
Sapphire Substrates ◽  
State Breakdown

AlGaN / GaN heterojunction field effect transistors (HFETs) on sapphire substrates for power-switching applications have been fabricated. Design parameters such as source-gate spacing (Lsg), gate length (Lg), and gate width (Wg) have been varied to check their effects on the device performances. For a gate-drain spacing (Lgd) of 10µm, a specific on-resistance (ARon) of 1.35mΩ-cm2 and off-state breakdown voltage (BV) of 770V was achieved, which is close to the 4- H SiC theoretical limit.

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