A facile route to a high-quality graphene/MoS2 vertical field-effect transistor with gate-modulated photocurrent response

2017 ◽  
Vol 5 (9) ◽  
pp. 2337-2343 ◽  
Author(s):  
M. Farooq Khan ◽  
M. Arslan Shehzad ◽  
M. Zahir Iqbal ◽  
M. Waqas Iqbal ◽  
Ghazanfar Nazir ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Current Density ◽  
High Current ◽  
Vertical Field ◽  
Clean Interface ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Facile Route

MoS2 was directly transferred to graphene, which produced a clean interface between graphene and MoS2. A high current ON–OFF ratio of ∼106 was demonstrated with a high current density of ∼105 A cm−2.

scholarly journals Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 241 ◽  
Author(s):  
Huolin Huang ◽  
Feiyu Li ◽  
Zhonghao Sun ◽  
Nan Sun ◽  
Feng Zhang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Blocking Layer ◽  
Vertical Field ◽  
Current Blocking Layer ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Current Blocking

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics.

Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction

2019 ◽  
Vol 53 (10) ◽  
pp. 1279-1281
Author(s):  
N. V. Vostokov ◽  
V. M. Daniltsev ◽  
S. A. Kraev ◽  
V. L. Krukov ◽  
E. V. Skorokhodov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Field ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor

Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

2009 ◽  
Vol 95 (21) ◽  
pp. 213301 ◽  
Author(s):  
Ariel J. Ben-Sasson ◽  
Eran Avnon ◽  
Elina Ploshnik ◽  
Oded Globerman ◽  
Roy Shenhar ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Field ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor
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