High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates

2003 ◽  
Vol 24 (3) ◽  
pp. 135-137 ◽  
Author(s):  
D.C. Dumka ◽  
H.Q. Tserng ◽  
M.Y. Kao ◽  
E.A. Beam ◽  
P. Saunier
Keyword(s):  
High Performance ◽  
Enhancement Mode ◽  
Gaas Substrates

Enhancement-mode Lg=50nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408GHz

2014 ◽  
Vol 99 ◽  
pp. 7-10 ◽  
Author(s):  
Ming Li ◽  
Chak Wah Tang ◽  
Haiou Li ◽  
Kei May Lau
Keyword(s):  
Enhancement Mode ◽  
Gaas Substrates

Nmos Logic Circuits in Laser-Crystallized Silicon on Quartz

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Chiang ◽  
M. H. Zarzycki ◽  
W. P. Meuli ◽  
N. M. Johnson
Keyword(s):  
High Performance ◽  
Logic Circuits ◽  
Leakage Currents ◽  
Enhancement Mode ◽  
Low Leakage ◽  
Fused Quartz ◽  
Amorphous Substrates ◽  
Circular Beam ◽  
Processing Steps ◽  
Dynamic Shift

ABSTRACTDepletion mode as well as enhancement mode n-channel thin-film transistors (TFT's) have been fabricated in CO2 laser-crystallized silicon on fused quartz. Nearly defect-free islands were obtained by using an offset circular beam to form a tilted melt interface. The optimization of subsequent processing steps to achieve simultaneously low leakage currents and voltage thresholds appropriate for depletion-load NMOS circuits involved adjustments of ion implantation and high temperature cycles with the aid of simulation. The resultant high performance silicon-gate TFT's have led to NMOS ring oscillators with 2.5 ns delay/stage and dynamic shift registers with MHz clock rates. These are the first logic circuits fabricated in beam-crystallized silicon on bulk amorphous substrates.

High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates

2002 ◽  
Vol 23 (6) ◽  
pp. 297-299 ◽  
Author(s):  
Y.M. Kim ◽  
M. Dahlstrom ◽  
S. Lee ◽  
A.J.W. Rodwell ◽  
A.C. Gossard
Keyword(s):  
High Performance ◽  
Gaas Substrates

High performance resonant tunnelling structures on GaAs substrates

1990 ◽  
Vol 26 (5) ◽  
pp. 340 ◽  
Author(s):  
H. Riechert ◽  
D. Bernklau ◽  
J.-P. Reithmaier ◽  
R.D. Schnell
Keyword(s):  
High Performance ◽  
Resonant Tunnelling ◽  
Gaas Substrates

Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates

1999 ◽  
Vol 20 (10) ◽  
pp. 507-509 ◽  
Author(s):  
K. Eisenbeiser ◽  
R. Droopad ◽  
Jenn-Hwa Huang
Keyword(s):  
Enhancement Mode ◽  
Gaas Substrates

High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT

2014 ◽  
Vol 75 ◽  
pp. 347-357 ◽  
Author(s):  
Sarosij Adak ◽  
Arghyadeep Sarkar ◽  
Sanjit Swain ◽  
Hemant Pardeshi ◽  
Sudhansu Kumar Pati ◽  
...  
Keyword(s):  
High Performance ◽  
Enhancement Mode
Sign in / Sign up

Export Citation Format

Share Document