Low insertion loss and low dispersion penalty InGaAsP quantum-well high-speed electroabsorption modulator for 40-Gb/s very-short-reach, long-reach, and long-haul applications

2002 ◽  
Vol 20 (12) ◽  
pp. 2052-2056 ◽  
Author(s):  
Won-Jin Choi ◽  
A.E. Bond ◽  
Jongwoo Kim ◽  
Jiaming Zhang ◽  
R. Jambunathan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Insertion Loss ◽  
High Speed ◽  
Electroabsorption Modulator ◽  
Low Insertion Loss ◽  
Low Dispersion

High-Speed Δβ-Reversal Directional Coupler Modulator with Low Insertion Loss for 1.3 μm in LiNbO3

1984 ◽  
Vol 5 (1) ◽  
Author(s):  
F. Auracher ◽  
D. Schicketanz ◽  
K.-H. Zeitler
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
Directional Coupler ◽  
Low Insertion Loss ◽  
Directional Coupler Modulator

SummaryWe report on a very fast (≥ 6 Gbit/s) Δβ-reversal directional-coupler modulator with low insertion loss (2 dB) for 1.3 μm wavelength operation. The design of the modulator permits easy and reproducible fabrication.

Local Quantum Well Intermixing for Fabricating High-Speed Electroabsorption Modulator

2018 ◽  
Author(s):  
Chih-Hsien Chen ◽  
Po-Yun Wang ◽  
Rih-You Chen ◽  
Cong-Long Chen ◽  
Yang-Jeng Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Quantum Well Intermixing ◽  
Electroabsorption Modulator ◽  
Local Quantum

Demonstration of a high-speed electro-optic switch with passive-to-active integrated waveguide based on SU-8 material

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50166-50172 ◽  
Author(s):  
Xi-Bin Wang ◽  
Ming-Hui Jiang ◽  
Shi-Qi Sun ◽  
Jing-Wen Sun ◽  
Yun-Ji Yi ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
Zehnder Interferometer ◽  
Electro Optic ◽  
Low Insertion Loss ◽  
High Speed Switching ◽  
Mach Zehnder Interferometer

A Mach–Zehnder interferometer type of electro-optic switch with passive-to-active integrated waveguides was fabricated based on SU-8 material, which exhibited low insertion loss and high-speed switching response.

Development of Dielectric Material Enabling Low Insertion Loss of Organic Substrates at Various Operational Temperatures

2020 ◽  
Vol 2020 (1) ◽  
pp. 000211-000216
Author(s):  
Tatsushi Hayashi ◽  
Po Yu Lin ◽  
Ryoichi Watanabe ◽  
Seiko Ichikawa
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
High Performance ◽  
Dielectric Material ◽  
Organic Substrate ◽  
Temperature Cycle ◽  
Organic Substrates ◽  
High Crack ◽  
Low Insertion Loss ◽  
Lower Insertion Loss

Abstract With IP traffic increasing by 10-fold over the last decade, together with limitation and cost increase due to shrinking semiconductor nodes have led to requiring technological breakthrough in the packaging of semiconductor devices especially those used in high performance computing (HPC).This increase in IP traffic has led to requirement for higher data speed transmission in these devices, and consequently packaging technologies that enable those solutions such as 2.5D packaging utilizing silicon interposers. Furthermore, in recent years, increasing number of dies are placed in a single package for these devices thereby making the size of silicon interposers larger. Thus, the design of organic substrates used in these devices, are also becoming ever complex often with multiple layers with long trace lengths for routing increased number of IOs and allowing for power and signal control management. In order to facilitate the high speed data transmission requirement with longer trace lengths, stable low insertion loss design of organic substrates are becoming significantly important even when devices are exposed at elevated humidity or higher temperatures due to surrounding environment or from dies heating. Additionally, as silicon interposers are increasing in size, preventing stress build-up, which can cause cracking between the interposer and the organic substrate, is also becoming paramount. These requirements have led to innovative materials to be developed to enable organic substrates to have these properties. In this paper, we present a new dielectric build-up material for use in advanced organic substrates, by combining newly developed original resin with existing formulation technology that meet these criteria of enabling lower insertion loss with design that reduces deterioration even at elevated humidity and temperature, and furthermore having high crack resistance during temperature cycle testing.

Two-section electroabsorption modulator with negative chirp at low insertion loss

1996 ◽  
Vol 32 (23) ◽  
pp. 2121 ◽  
Author(s):  
M. Claassen ◽  
W. Harth ◽  
B. Stegmüller
Keyword(s):  
Insertion Loss ◽  
Electroabsorption Modulator ◽  
Low Insertion Loss

High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides

2019 ◽  
Vol 56 (15) ◽  
pp. 152302
Author(s):  
聂立霞 Lixia Nie ◽  
张燕 Yan Zhang ◽  
鲜仕林 Shilin Xian ◽  
秦俊 Jun Qin ◽  
王会丽 Huili Wang ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
Phase Shifter ◽  
High Mobility ◽  
Transparent Conductive Oxides ◽  
Silicon Waveguide ◽  
Low Insertion Loss
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