Local Quantum Well Intermixing for Fabricating High-Speed Electroabsorption Modulator

2018 ◽  
Author(s):  
Chih-Hsien Chen ◽  
Po-Yun Wang ◽  
Rih-You Chen ◽  
Cong-Long Chen ◽  
Yang-Jeng Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Quantum Well Intermixing ◽  
Electroabsorption Modulator ◽  
Local Quantum

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

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