Very low insertion loss (>5 dB) and high-speed InGaAs-InAlAs MQW modulators buried in semi-insulating InP

2002 ◽  
Author(s):  
K. Wahita ◽  
K. Yoshino ◽  
S. Matsumoto ◽  
I. Kotaka ◽  
N. Yoshimoto ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
Low Insertion Loss

High-Speed Δβ-Reversal Directional Coupler Modulator with Low Insertion Loss for 1.3 μm in LiNbO3

1984 ◽  
Vol 5 (1) ◽  
Author(s):  
F. Auracher ◽  
D. Schicketanz ◽  
K.-H. Zeitler
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
Directional Coupler ◽  
Low Insertion Loss ◽  
Directional Coupler Modulator

SummaryWe report on a very fast (≥ 6 Gbit/s) Δβ-reversal directional-coupler modulator with low insertion loss (2 dB) for 1.3 μm wavelength operation. The design of the modulator permits easy and reproducible fabrication.

Demonstration of a high-speed electro-optic switch with passive-to-active integrated waveguide based on SU-8 material

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50166-50172 ◽  
Author(s):  
Xi-Bin Wang ◽  
Ming-Hui Jiang ◽  
Shi-Qi Sun ◽  
Jing-Wen Sun ◽  
Yun-Ji Yi ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
Zehnder Interferometer ◽  
Electro Optic ◽  
Low Insertion Loss ◽  
High Speed Switching ◽  
Mach Zehnder Interferometer

A Mach–Zehnder interferometer type of electro-optic switch with passive-to-active integrated waveguides was fabricated based on SU-8 material, which exhibited low insertion loss and high-speed switching response.

Development of Dielectric Material Enabling Low Insertion Loss of Organic Substrates at Various Operational Temperatures

2020 ◽  
Vol 2020 (1) ◽  
pp. 000211-000216
Author(s):  
Tatsushi Hayashi ◽  
Po Yu Lin ◽  
Ryoichi Watanabe ◽  
Seiko Ichikawa
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
High Performance ◽  
Dielectric Material ◽  
Organic Substrate ◽  
Temperature Cycle ◽  
Organic Substrates ◽  
High Crack ◽  
Low Insertion Loss ◽  
Lower Insertion Loss

Abstract With IP traffic increasing by 10-fold over the last decade, together with limitation and cost increase due to shrinking semiconductor nodes have led to requiring technological breakthrough in the packaging of semiconductor devices especially those used in high performance computing (HPC).This increase in IP traffic has led to requirement for higher data speed transmission in these devices, and consequently packaging technologies that enable those solutions such as 2.5D packaging utilizing silicon interposers. Furthermore, in recent years, increasing number of dies are placed in a single package for these devices thereby making the size of silicon interposers larger. Thus, the design of organic substrates used in these devices, are also becoming ever complex often with multiple layers with long trace lengths for routing increased number of IOs and allowing for power and signal control management. In order to facilitate the high speed data transmission requirement with longer trace lengths, stable low insertion loss design of organic substrates are becoming significantly important even when devices are exposed at elevated humidity or higher temperatures due to surrounding environment or from dies heating. Additionally, as silicon interposers are increasing in size, preventing stress build-up, which can cause cracking between the interposer and the organic substrate, is also becoming paramount. These requirements have led to innovative materials to be developed to enable organic substrates to have these properties. In this paper, we present a new dielectric build-up material for use in advanced organic substrates, by combining newly developed original resin with existing formulation technology that meet these criteria of enabling lower insertion loss with design that reduces deterioration even at elevated humidity and temperature, and furthermore having high crack resistance during temperature cycle testing.

High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides

2019 ◽  
Vol 56 (15) ◽  
pp. 152302
Author(s):  
聂立霞 Lixia Nie ◽  
张燕 Yan Zhang ◽  
鲜仕林 Shilin Xian ◽  
秦俊 Jun Qin ◽  
王会丽 Huili Wang ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
Phase Shifter ◽  
High Mobility ◽  
Transparent Conductive Oxides ◽  
Silicon Waveguide ◽  
Low Insertion Loss

Demonstration of a high-speed switch with coplanar waveguide electrodes based on electro-optic polymer-clad waveguides

RSC Advances ◽  
2015 ◽  
Vol 5 (83) ◽  
pp. 67646-67651 ◽  
Author(s):  
Xi-Bin Wang ◽  
Jing-Wen Sun ◽  
Jian Sun ◽  
Zuo-Sen Shi ◽  
Fei Wang ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Speed ◽  
Coplanar Waveguide ◽  
Wet Etching ◽  
Zehnder Interferometer ◽  
Electro Optic ◽  
Low Insertion Loss ◽  
High Speed Switching ◽  
Mach Zehnder Interferometer

A Mach–Zehnder interferometer type of optic switch with electro-optic polymer-clad waveguides was fabricated with the simple wet-etching procedure, which exhibited low insertion loss and high-speed switching response.

High-speed electro-optic switch using buried electrode structure in polymer Mach–Zehnder waveguide

2016 ◽  
Vol 30 (06) ◽  
pp. 1650063 ◽  
Author(s):  
Jingwen Sun ◽  
Jian Sun ◽  
Yunji Yi ◽  
Lucheng Qv ◽  
Shiqi Sun ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Rise Time ◽  
High Speed ◽  
Low Cost ◽  
Characteristic Parameters ◽  
Electrode Structure ◽  
Processing Cost ◽  
Electro Optic ◽  
Disperse Red 1 ◽  
Excellent Photostability

A low-cost and high-speed electro-optic (EO) switch using the guest–host EO material Disperse Red 1/Polymethyl Methacrylate (DR1/PMMA) was designed and fabricated. The DR1/PMMA material presented a low processing cost, an excellent photostability and a large EO coefficient of 13.1 pm/V. To improve the performance of the switch, the in-plane buried electrode structure was introduced in the polymer Mach–Zehnder waveguide to improve the poling and modulating efficiency. The characteristic parameters of the waveguide and the electrodes were carefully designed and the fabrication process was strictly controlled. Under 1550 nm, the insertion loss of the device was 12.7 dB. The measured switching rise time and fall time of the switch were 50.00 ns and 54.29 ns, respectively.

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