In situ optical monitoring of the initial oxidation processes on Si[001] by reflectance difference spectroscopy (RDS)

2002 ◽  
Author(s):  
T. Yasuda ◽  
S. Yamasaki ◽  
M. Ichikawa ◽  
K. Yamabe ◽  
H. Oheda ◽  
...  
Keyword(s):  
Optical Monitoring ◽  
Difference Spectroscopy ◽  
Initial Oxidation ◽  
Oxidation Processes ◽  
Reflectance Difference Spectroscopy

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in GAAS

2006 ◽  
Author(s):  
A. Lastras-Martinez ◽  
I. Lara-Velazquez ◽  
R.e. Balderas-Navarro ◽  
J. Ortega-Gallegos ◽  
L.f. Lastras-Martinez
Keyword(s):  
Optical Probe ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

In situ reflectance difference spectroscopy of p-type ZnTe:N grown by MBE

2000 ◽  
Vol 373 (1-2) ◽  
pp. 41-45 ◽  
Author(s):  
D Stifter ◽  
A Bonanni ◽  
M Garcı́a-Rocha ◽  
M Schmid ◽  
K Hingerl ◽  
...  
Keyword(s):  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
P Type

In-Situ and Ex-Situ Studies of Silicon Interfaces and Nanostructures by Ellipsometry and Rds

1995 ◽  
Vol 406 ◽  
Author(s):  
U. Rossowl ◽  
L. Mantese ◽  
U. Frotscher ◽  
D. E. Aspnes ◽  
W. Richter
Keyword(s):  
Dielectric Function ◽  
Electrochemical Etching ◽  
Chemical Species ◽  
Ex Situ ◽  
Silicon Nanostructures ◽  
Interface Properties ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
Modified Surfaces

AbstractWe report surface-induced optical anisotropy (SIOA) spectra and dielectric function data of vicinal Si(001) surfaces using reflectance-difference spectroscopy (RDS) and spectroscopic ellipsometry (SE). To find the main contributions of the optical response we took data for clean and by hydrogen, oxygen, and arsenic modified surfaces. The SIOA lineshapes, as measured by reflectance-difference (RD) spectroscopy, can be either derivative-like or similar to the dielectric function as measured by SE. The derivative-like spectra appear to be associated with step contributions while the dielectric-function-like behavior appears to arise from terrace dimers and/or changes in chemical species bonded to the steps. In addition, we present SE data of silicon nanostructures formed by electrochemical etching and find that their behavior is dominated by interface properties.

scholarly journals In-situ characterization of metal clusters supported on a birefringent substrate using reflectance difference spectroscopy

2009 ◽  
Vol 98 (3) ◽  
pp. 499-507 ◽  
Author(s):  
J. M. Flores-Camacho ◽  
G. Weidlinger ◽  
N. Saucedo-Zeni ◽  
L. D. Sun ◽  
M. Hohage ◽  
...  
Keyword(s):  
Metal Clusters ◽  
Difference Spectroscopy ◽  
In Situ Characterization ◽  
Reflectance Difference Spectroscopy
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