In-Situ and Ex-Situ Studies of Silicon Interfaces and Nanostructures by Ellipsometry and Rds

1995 ◽  
Vol 406 ◽  
Author(s):  
U. Rossowl ◽  
L. Mantese ◽  
U. Frotscher ◽  
D. E. Aspnes ◽  
W. Richter
Keyword(s):  
Dielectric Function ◽  
Electrochemical Etching ◽  
Chemical Species ◽  
Ex Situ ◽  
Silicon Nanostructures ◽  
Interface Properties ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
Modified Surfaces

AbstractWe report surface-induced optical anisotropy (SIOA) spectra and dielectric function data of vicinal Si(001) surfaces using reflectance-difference spectroscopy (RDS) and spectroscopic ellipsometry (SE). To find the main contributions of the optical response we took data for clean and by hydrogen, oxygen, and arsenic modified surfaces. The SIOA lineshapes, as measured by reflectance-difference (RD) spectroscopy, can be either derivative-like or similar to the dielectric function as measured by SE. The derivative-like spectra appear to be associated with step contributions while the dielectric-function-like behavior appears to arise from terrace dimers and/or changes in chemical species bonded to the steps. In addition, we present SE data of silicon nanostructures formed by electrochemical etching and find that their behavior is dominated by interface properties.

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in GAAS

2006 ◽  
Author(s):  
A. Lastras-Martinez ◽  
I. Lara-Velazquez ◽  
R.e. Balderas-Navarro ◽  
J. Ortega-Gallegos ◽  
L.f. Lastras-Martinez
Keyword(s):  
Optical Probe ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

scholarly journals 1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Henning Fouckhardt ◽  
Johannes Strassner ◽  
Thomas H. Loeber ◽  
Christoph Doering
Keyword(s):  
Gaas Substrate ◽  
Semiconductor Quantum Dots ◽  
Ex Situ ◽  
Difference Spectroscopy ◽  
Wetting Layer ◽  
Reflectance Anisotropy ◽  
Atomic Force ◽  
Monitoring Technique ◽  
Scientific Dispute

III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years. There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only.

In Situ Observation of an Electrochemical Etching Reaction in Silicon

1995 ◽  
Vol 404 ◽  
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Pore Formation ◽  
Electrochemical Etching ◽  
Ex Situ ◽  
In Situ Observation ◽  
Specimen Holder

AbstractWe describe a TEM specimen holder which has been designed and constructed in order to observe the process of electrochemical pore formation in silicon. The holder incorporates electrical feedthroughs and a sealed reservoir for the electrolyte and it accepts lithographically patterned silicon specimens. We present ex situ observations of progressive pore propagation and show dynamic, in situ observations of electrolyte movement within the pores.

In situ reflectance difference spectroscopy of p-type ZnTe:N grown by MBE

2000 ◽  
Vol 373 (1-2) ◽  
pp. 41-45 ◽  
Author(s):  
D Stifter ◽  
A Bonanni ◽  
M Garcı́a-Rocha ◽  
M Schmid ◽  
K Hingerl ◽  
...  
Keyword(s):  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
P Type

scholarly journals In-situ characterization of metal clusters supported on a birefringent substrate using reflectance difference spectroscopy

2009 ◽  
Vol 98 (3) ◽  
pp. 499-507 ◽  
Author(s):  
J. M. Flores-Camacho ◽  
G. Weidlinger ◽  
N. Saucedo-Zeni ◽  
L. D. Sun ◽  
M. Hohage ◽  
...  
Keyword(s):  
Metal Clusters ◽  
Difference Spectroscopy ◽  
In Situ Characterization ◽  
Reflectance Difference Spectroscopy

In situ reflectance difference spectroscopy: nitrogen-plasma doping of MBE grown ZnTe layers

1999 ◽  
Vol 201-202 ◽  
pp. 132-136 ◽  
Author(s):  
D. Stifter ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
M. Schmid ◽  
K. Hingerl ◽  
...  
Keyword(s):  
Nitrogen Plasma ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
Plasma Doping
Sign in / Sign up

Export Citation Format

Share Document