Atom Probe Characterization of Magnetic and Semiconductor Device Structures

2006 ◽  
Author(s):  
D. J. Larson ◽  
K. Thompson
Keyword(s):  
Semiconductor Device ◽  
Atom Probe ◽  
Device Structures

Characterization of semiconductor device structures using contactless electromodulation

1995 ◽  
Author(s):  
Fred H. Pollak ◽  
Wojciech Krystek ◽  
M. Leibovitch ◽  
S. Moneger ◽  
Hao Qiang ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Device Structures

Atom-Probe Tomography of Semiconductor Materials and Device Structures

MRS Bulletin ◽  
2009 ◽  
Vol 34 (10) ◽  
pp. 738-743 ◽  
Author(s):  
Lincoln J. Lauhon ◽  
Praneet Adusumilli ◽  
Paul Ronsheim ◽  
Philip L. Flaitz ◽  
Dan Lawrence
Keyword(s):  
Atom Probe Tomography ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Atom Probe ◽  
Semiconductor Materials ◽  
Synthesis Methods ◽  
Contour Analysis ◽  
Device Structures ◽  
Silicon And Germanium

AbstractThe development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivity and three-dimensional spatial resolution of APT makes it uniquely capable of addressing challenges resulting from the continued shrinking of semiconductor device dimensions, the integration of new materials and interfaces, and the optimization of evolving fabrication processes. Particularly pressing concerns include the variability in device performance due to discrete impurity atom distributions, the phase and interface stability in contacts and gate dielectrics, and the validation of simulations of impurity diffusion. This overview of APT of semiconductors features research on metal-silicide contact formation and phase control, silicon field-effect transistors, and silicon and germanium nanowires. Work on silicide contacts to silicon is reviewed to demonstrate impurity characterization in small volumes and indicate how APT can facilitate defect mitigation and process optimization. Impurity contour analysis of a pFET semiconductor demonstrates the site-specificity that is achievable with current APTs and highlights complex device challenges that can be uniquely addressed. Finally, research on semiconducting nanowires and nanowire heterostructures demonstrates the potential for analysis of materials derived from bottom-up synthesis methods.

Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions

2019 ◽  
Vol 26 (1) ◽  
pp. 36-45 ◽  
Author(s):  
Rong Hu ◽  
Jing Xue ◽  
Xingping Wu ◽  
Yanbo Zhang ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Field Effect Transistor ◽  
Semiconductor Device ◽  
Complex Structure ◽  
Three Dimensional ◽  
Atom Probe ◽  
Negative Effects ◽  
Center Axis ◽  
Effect Transistor

AbstractAtom probe tomography (APT) has emerged as an important tool in characterizing three-dimensional semiconductor devices. However, the complex structure and hybrid nature of a semiconductor device can pose serious challenges to the accurate measurement of dopants. In particular, local magnification and trajectory aberration observed when analyzing hybrid materials with different evaporation fields can cause severe distortions in reconstructed geometry and uncertainty in local chemistry measurement. To address these challenges, this study systematically investigates the effect of APT sampling directions on the measurement of n-type dopants P and As in an Si fin field-effect transistor (FinFET). We demonstrate that the APT samples made with their Z-axis perpendicular to the center axis of the fin are effective to minimize the negative effects that result from evaporation field differences between the Si fin and SiO2 on reconstruction and achieve improved measurement of dopant distributions. In addition, new insights have been gained regarding the distribution of ion-implanted P and As in the Si FinFET.

TEM Sample Fabrication of Sub 22 nm Three-Dimensional Test Structures

2013 ◽  
Author(s):  
James J. Demarest
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Three Dimensional ◽  
Manufacturing Plants ◽  
Transmission Electron ◽  
Device Structures ◽  
Device Integration ◽  
The One ◽  
Device Technology

Abstract With the 14nm technology node becoming a reality at today's state-of-the-art semiconductor manufacturing plants and the 10nm node actively being planned for, device structures have shrunk well beyond the minimum conventional transmission electron microscope (TEM) sample thickness: 50-100nm. This paper addresses the challenges in TEM sample preparation of sub 22nm three-dimensional test structures. As semiconductor device technology continues to shrink and become more complicated with the addition of three-dimensional device integration, unique sample preparation challenges will continue to arise. This opens the door to novel solutions for these problems like the one presented in this paper: an issue that arose where TEM projection effects interfered with proper characterization of a finFET test structure.

scholarly journals Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7058-7066 ◽  
Author(s):  
Andreas Schulze ◽  
Libor Strakos ◽  
Tomas Vystavel ◽  
Roger Loo ◽  
Antoine Pacco ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Quantitative Characterization ◽  
Crystalline Defects ◽  
Device Structures ◽  
Non Destructive ◽  
Non Destructive Characterization

Non-destructive and quantitative characterization of crystalline defects: understanding the formation and distribution of defects in nanoscale semiconductor device structures.

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