scholarly journals Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7058-7066 ◽  
Author(s):  
Andreas Schulze ◽  
Libor Strakos ◽  
Tomas Vystavel ◽  
Roger Loo ◽  
Antoine Pacco ◽  
...  

Non-destructive and quantitative characterization of crystalline defects: understanding the formation and distribution of defects in nanoscale semiconductor device structures.

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Uchida ◽  
J. Shigeta ◽  
Y. SUZUKI

ABSTRACTA non-destructive characterization technique featuring a hard X-ray Microprobe is demonstrated for lll-V semiconductor device structures. A GaAs FET with a 2 μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images of the FET are obtained by diffracted X-ray and fluorescence X-ray detection. Diffracted X-ray detection measures the difference in gate material and source or drain material as a gray level difference on the image due to the X-ray absorption ratio. Ni Ka fluorescence detection, on the other hand, provides imaging of 500 Å thick Ni layers, which are contained only in the source and drain metals, through non-destructive observation.


2017 ◽  
Vol 25 (6) ◽  
pp. 42-47 ◽  
Author(s):  
Reeju Pokharel ◽  
Donald W. Brown ◽  
Bjørn Clausen ◽  
Darrin D. Byler ◽  
Timothy L. Ickes ◽  
...  

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