Non-destructive, room temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy

2005 ◽  
Vol 202 (7) ◽  
pp. 1193-1207 ◽  
Author(s):  
Y. S. Huang ◽  
F. H. Pollak
Keyword(s):  
Room Temperature ◽  
Semiconductor Device ◽  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy ◽  
Device Structures ◽  
Non Destructive

scholarly journals Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7058-7066 ◽  
Author(s):  
Andreas Schulze ◽  
Libor Strakos ◽  
Tomas Vystavel ◽  
Roger Loo ◽  
Antoine Pacco ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Quantitative Characterization ◽  
Crystalline Defects ◽  
Device Structures ◽  
Non Destructive ◽  
Non Destructive Characterization

Non-destructive and quantitative characterization of crystalline defects: understanding the formation and distribution of defects in nanoscale semiconductor device structures.

Non-Destructive Measurements of III-V Semiconductor Device Structure by a Hard X-ray Microprobe

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Uchida ◽  
J. Shigeta ◽  
Y. SUZUKI
Keyword(s):  
Semiconductor Device ◽  
Film Structure ◽  
Device Structure ◽  
X Ray ◽  
Model Sample ◽  
Device Structures ◽  
The Difference ◽  
X Ray Absorption ◽  
Non Destructive ◽  
Non Destructive Characterization

ABSTRACTA non-destructive characterization technique featuring a hard X-ray Microprobe is demonstrated for lll-V semiconductor device structures. A GaAs FET with a 2 μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images of the FET are obtained by diffracted X-ray and fluorescence X-ray detection. Diffracted X-ray detection measures the difference in gate material and source or drain material as a gray level difference on the image due to the X-ray absorption ratio. Ni Ka fluorescence detection, on the other hand, provides imaging of 500 Å thick Ni layers, which are contained only in the source and drain metals, through non-destructive observation.

Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates

2007 ◽  
Vol 19 (9) ◽  
pp. 096009 ◽  
Author(s):  
H P Hsu ◽  
P Y Wu ◽  
Y S Huang ◽  
S Sanorpim ◽  
K K Tiong ◽  
...  
Keyword(s):  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy

Photoluminescence and surface photovoltage spectroscopy characterization of Zn1−x−yBexMgySe mixed crystals

2008 ◽  
Vol 103 (9) ◽  
pp. 093522 ◽  
Author(s):  
D. O. Dumcenco ◽  
H. P. Hsu ◽  
Y. S. Huang ◽  
F. Firszt ◽  
S. Łęgowski ◽  
...  
Keyword(s):  
Mixed Crystals ◽  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy
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