13.1 A fully integrated multimode front-end module for GSM/EDGE/TD-SCDMA/TD-LTE applications using a Class-F CMOS power amplifier

2017 ◽  
Author(s):  
Ming-Da Tsai ◽  
Chien-Cheng Lin ◽  
Ping-Yu Chen ◽  
Tao-Yao Chang ◽  
Chien-Wei Tseng ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Fully Integrated ◽  
Front End ◽  
Front End Module ◽  
Class F

An LTCC Based Filter and Front End Module using Heterogeneous Dielectrics

2006 ◽  
Vol 3 (3) ◽  
pp. 129-135 ◽  
Author(s):  
Jun Chul Kim ◽  
Dongsu Kim ◽  
Hyun Min Cho ◽  
Jong Chul Park ◽  
Nam Kee Kang
Keyword(s):  
Power Amplifier ◽  
Bandpass Filter ◽  
Wave Length ◽  
Signal Delay ◽  
Ceramic Substrates ◽  
Front End ◽  
Quarter Wave ◽  
Front End Module ◽  
Signal Delay Time ◽  
Shunt Capacitor

This paper presents a multi-layered bandpass filter (BPF) and a power amplifier module (PAM) integrated with a SAW duplexer based on heterogeneous ceramic substrates. The heterogeneous substrates are composed of two different ceramic layers with εr = 7.4 and 17.5 in order to take advantage of their own properties. In the PAM substrate, a DC blocking capacitor and a shunt capacitor for an output matching network of a power amplifier are embedded with a material of εr = 17.5 to reduce occupied areas of the capacitors. On the other hand, a quarter-wave-length stripline and RF chokes are realized with a material of εr = 7.4 to reduce signal delay time. In the multi-layered BPF, a coupled stripline and a high shunt capacitor are embedded with materials of εr = 7.4 and 17.5, respectively, resulting in improved spurious characteristics.

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