Unambiguous demonstration of room temperature CW operation of a sub-wavelength metallic cavity laser

2012 ◽  
Author(s):  
K. Ding ◽  
M. T. Hill ◽  
Z. C. Liu ◽  
L. J. Yin ◽  
P. J. van Veldhoven ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cw Operation ◽  
Cavity Laser ◽  
Sub Wavelength

Room Temperature CW Operation of GaInAsSb/AlGaAsSb Quantum Well Lasers Emitting in the 2.2 to 2.3µm Wavelength Range

1999 ◽  
Vol 607 ◽  
Author(s):  
C. Mermelstein ◽  
S. Simanowski ◽  
M. Mayer ◽  
R. Kiefer ◽  
J. Schmitz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Optical Cavity ◽  
Light Output ◽  
Threshold Current ◽  
Type I ◽  
Material System ◽  
Cw Operation ◽  
Cavity Laser

AbstractWe report on room temperature cw operation of type-I semiconductor quantum well (QW) laser diodes based on the GaInAsSb/AIGaAsSb/GaSb material system emitting beyond 2.2 µm. Lasing is observed in cw mode up to at least 320 K. A high internal quantum efficiency of 65% and a low internal loss coefficient of 5 cm1have been achieved for a single QW (SQW)large optical cavity laser at 280 K. An extrapolated threshold current density for infinite cavity length of 144 A/cm2and 55 A/cm2has been deduced for the 3 QW and SQW lasers, respectively, which scales with the number of QWs. A maximum cw light output power of 230 mW at 280 K heatsink temperature was obtained for a 3 QW large optical cavity laser with HR/AR coated mirror facets, mounted substrate-side down.

scholarly journals Mid infrared polarization engineering via sub-wavelength biaxial hyperbolic van der Waals crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar
Keyword(s):  
Room Temperature ◽  
Extinction Ratio ◽  
Polarization State ◽  
Van Der Waals ◽  
Photonic Devices ◽  
Mid Infrared ◽  
Precise Control ◽  
Electromagnetic Simulations ◽  
Frequency Regime ◽  
Sub Wavelength

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

Room‐Temperature cw Operation of a GaAs1−xPx Diode‐Pumped YAG:Nd Laser

1971 ◽  
Vol 19 (8) ◽  
pp. 289-292 ◽  
Author(s):  
F. W. Ostermayer ◽  
R. B. Allen ◽  
E. G. Dierschke
Keyword(s):  
Room Temperature ◽  
Cw Operation ◽  
Diode Pumped

Room-temperature, CW operation of lattice-matched long-wavelength VCSELs

2000 ◽  
Vol 36 (17) ◽  
pp. 1465 ◽  
Author(s):  
E. Hall ◽  
S. Nakagawa ◽  
G. Almuneau ◽  
J.K. Kim ◽  
L.A. Coldren
Keyword(s):  
Room Temperature ◽  
Long Wavelength ◽  
Cw Operation ◽  
Lattice Matched
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