15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under CW operation at room temperature

1985 ◽  
Vol 21 (13) ◽  
pp. 577 ◽  
Author(s):  
C.B. Su ◽  
V. Lanzisera ◽  
R. Olshansky ◽  
W. Powazinik ◽  
E. Meland ◽  
...  
Keyword(s):  
Room Temperature ◽  
Vapour Phase ◽  
Modulation Bandwidth ◽  
Direct Modulation ◽  
Cw Operation ◽  
Buried Heterostructure

12.5‐GHz direct modulation bandwidth of vapor phase regrown 1.3‐μm InGaAsP buried heterostructure lasers

1985 ◽  
Vol 46 (4) ◽  
pp. 344-346 ◽  
Author(s):  
C. B. Su ◽  
V. Lanzisera ◽  
W. Powazinik ◽  
E. Meland ◽  
R. Olshansky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Modulation Bandwidth ◽  
Direct Modulation ◽  
Buried Heterostructure

15-GHz direct-modulation bandwidth of vapor phase regrown 1.3-μm InGaAsP buried heterostructure lasers

1985 ◽  
Author(s):  
C. B. SU ◽  
V. LANZISERA ◽  
W. POWZINIK ◽  
E. MELAND ◽  
R. OLSHANSKY ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Modulation Bandwidth ◽  
Direct Modulation ◽  
Buried Heterostructure

Room temperature synthesized spherical V-MCM-41: a catalyst for vapour phase oxidation of diphenylmethane

2012 ◽  
Vol 19 (6) ◽  
pp. 1027-1036 ◽  
Author(s):  
D. Santhanaraj ◽  
C. Suresh ◽  
M. Gurulakshmi ◽  
N. R. Sasirekha ◽  
K. Shanthi
Keyword(s):  
Room Temperature ◽  
Vapour Phase ◽  
Phase Oxidation ◽  
Mcm 41 ◽  
Vapour Phase Oxidation
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