Room‐Temperature cw Operation of a GaAs1−xPx Diode‐Pumped YAG:Nd Laser

1971 ◽  
Vol 19 (8) ◽  
pp. 289-292 ◽  
Author(s):  
F. W. Ostermayer ◽  
R. B. Allen ◽  
E. G. Dierschke
2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.


1995 ◽  
Vol 20 (23) ◽  
pp. 2384 ◽  
Author(s):  
David S. Sumida ◽  
T. Y. Fan

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama

Laser Physics ◽  
2011 ◽  
Vol 21 (9) ◽  
pp. 1566-1569 ◽  
Author(s):  
F. Chen ◽  
B. Q. Yao ◽  
X. D. He ◽  
C. H. Zhang ◽  
G. Li ◽  
...  

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