Current-Mode Phase-Locked Loops with Low Supply Voltage Sensitivity

Author(s):  
D. DiClemente ◽  
F. Yuan
Author(s):  
Mohd Khairi Zulkalnain ◽  
Yan Chiew Wong

A charge pump for phase locked loops (PLL) with a novel current mismatch compensation technique is proposed. The proposed circuit uses a simple yet effective current stealing-injecting (CSI) technique and feedback to reduce mismatch between the negative-channel-metal-oxide (NMOS) and positive-channel-metal-oxide (PMOS) transistors. The current stealing transistor steals the current from a replica branch and mirrors it to the output where it is added to the output branch by the injecting transistor. A feedback mechanism is used to set the drain voltages of both branches to be equal and mitigate channel length modulation and ensure high accuracy. The proposed circuit was designed on Silterra 130nm technology and simulated using Cadence Spectre. The simulation results show that the proposed circuit yields a maximum of 0.107% and minimum of 0.00465% current mismatch while operating at a low supply voltage of 800mV for a range of 100mV to 700mV. The proposed design uses only one rail-to-rail op amp for compensating the mismatch and an addition of 4 transistors and utilizing 75% of the supply voltage for high voltage controlled oscillator (VCO) tuning range.


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Chen Chong ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen

AbstractIn this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules. DM-DSTGTFET adopts double source and trench gate to enhance the on-state current and to generate bidirectional current. In the proposed structure, two cavities are etched over 1 nm gate oxide for biomolecules filling. A 2D simulation in the Technology Computer-Aided Design (TCAD) is adopted for the analysis of sensitivity study. The results show that under low supply voltage, the current sensitivity of the DM-DSTGTFET is as high as 1.38 × 105, and the threshold voltage sensitivity can reach 1.2 V. Therefore, the DM-DSTGTFET biosensor has good application prospects due to its low power consumption and high sensitivity.


Author(s):  
Jetsdaporn Satansup ◽  
Worapong Tangsrirat

A circuit technique for designing a compact low-voltage current-mode multiplier/divider circuit in CMOS technology is presented.  It is based on the use of a compact current quadratic cell able to operate at low supply voltage.  The proposed circuit is designed and simulated for implementing in TSMC 0.25-m CMOS technology with a single supply voltage of 1.5 V.  Simulation results using PSPICE, accurately agreement with theoretical ones, have been provided, and also demonstrate a maximum linearity error of 1.5%, a THD less than 2% at 100 MHz, a total power consumption of 508 W, and -3dB small-signal frequency of about 245 MHz.


Author(s):  
Reza Zarei ◽  
Moora Maali

In this paper, a current-mode analog multiplier circuit is proposed that utilizes MOS translinear principle. The parameters of TSMC 0.18µm technology are used to design the proposed multiplier that employs CMOS transistors operating in weak inversion region. Simulations are performed by HSPICE for the circuit to prove its great merits of; low power consumption (100µW), low supply voltage (1.6V), body effect immunity, wide input range (±100nA), bandwidth of 1 MHz, and THD of 4%.


2016 ◽  
Vol 25 (06) ◽  
pp. 1650066 ◽  
Author(s):  
Pantre Kompitaya ◽  
Khanittha Kaewdang

A current-mode CMOS true RMS-to-DC (RMS: root-mean-square) converter with very low voltage and low power is proposed in this paper. The design techniques are based on the implicit computation and translinear principle by using CMOS transistors that operate in the weak inversion region. The circuit can operate for two-quadrant input current with wide input dynamic range (0.4–500[Formula: see text]nA) with an error of less than 1%. Furthermore, its features are very low supply voltage (0.8[Formula: see text]V), very low power consumption ([Formula: see text]0.2[Formula: see text]nW) and low circuit complexity that is suitable for integrated circuits (ICs). The proposed circuit is designed using standard 0.18[Formula: see text][Formula: see text]m CMOS technology and the HSPICE simulation results show the high performance of the circuit and confirm the validity of the proposed design technique.


Author(s):  
MOHAMMAD HADI DANESH ◽  
SASAN NIKSERESHT ◽  
MAHYAR DEHDAST

In this paper a low-power current-mode RMS-to-DC converter is proposed. The proposed converter includes absolute value circuit, squarer/divider circuit, low-pass filter and square root circuit which employ CMOS transistors operating in weak inversion region. The RMS-to-DC converter has low power consumption (<1μW), low supply voltage (0.9V), wide input range (from 50 nA to 500 nA), low relative error (<3 %), and low circuit complexity. Comparing the proposed circuit with two other current-mode circuits shows that the former outperforms the latters in terms of power dissipation, supply voltage, and complexity. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.


Author(s):  
MOHAMMAD HADI DANESH ◽  
MAHYAR DEHDAST ◽  
ABDOLGHANI AREKHI ◽  
AMIN EMAMI FARD

In this paper a low-power current-mode RMS-to-DC converter is proposed. The converter includes two-quadrant squarer/divider and the first-order low-pass filter cell, both of them use MOS translinear loops. The RMS-to-DC converter has low power consumption (< 0.75μW), low supply voltage (0.8 V), wide input range (from 40 nA to 500 nA), low relative error (< 3 %), and low circuit complexity. Comparing the proposed circuit with two other current-mode circuits shows that the former outperforms the latters in terms of power dissipation, supply voltage, and complexity. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.


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