From ferroelectric ceramics and single crystals to thick and thin films: how domain-wall processes control the piezoelectric and dielectric properties

2002 ◽  
Author(s):  
D. Damjanovic ◽  
G. Robert ◽  
J. Muller ◽  
M.D. Maeder ◽  
D.V. Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Single Crystals ◽  
Ferroelectric Ceramics

Effects of annealing on domain-wall contributions to the dielectric properties of PZT thin films

2013 ◽  
Vol 63 (10) ◽  
pp. 2002-2007 ◽  
Author(s):  
Sam Yeon Cho ◽  
Jin Ho Kwak ◽  
Sun A. Yang ◽  
Sang Don Bu ◽  
Sungkyun Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Pzt Thin Films

scholarly journals Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition

1999 ◽  
Vol 14 (11) ◽  
pp. 4307-4318 ◽  
Author(s):  
S. Hiboux ◽  
P. Muralt ◽  
T. Maeder
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Diffraction Analysis ◽  
Piezoelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited ◽  
Dielectric And Piezoelectric Properties

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

Investigation of Domain Wall Velocity and Nucleation Rate in Polarization Switching of Epitaxial Pb(Zr,Ti)O3 Thin Films Using Piezoresponse Scanning Force Microscopy

2002 ◽  
Vol 748 ◽  
Author(s):  
H. Fujisawa ◽  
T. Yagi ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Single Crystals ◽  
Nucleation Rate ◽  
Switching Time ◽  
Scanning Force Microscopy ◽  
Wall Velocity ◽  
Force Microscopy ◽  
Domain Wall Velocity ◽  
Scanning Force

ABSTRACTDomain wall velocity and nucleation rate in 250nm-thick epitaxial Pb(Zr,Ti)O3 thin films were studied by piezoresponse scanning force microscopy (PFM). Domain growth observed after applying switching pulses shorter than the switching time can be described using the Ishibashi theory. At a pulse voltage of +5V, experimental results indicated that new nucleation occurred during the switching period, which corresponded to the Category I in the Ishibashi theory. Switching time, domain wall velocity and nucleation rate at +5V can be obtained as 70ns, 8.3m/s and 43μs-1 μm-2, respectively. As compared with experimental results reported in BaTiO3 single crystals, domain wall velocity was much smaller but nucleation rate was much larger than those in single crystals.

Domain Wall Contributions to the Piezoelectric Properties of Ferroelectric Ceramics and Thin Films, and Their Significance in Sensor and Actuator Applications

1996 ◽  
Vol 459 ◽  
Author(s):  
D. Damjanovic ◽  
D. V. Taylor ◽  
A. L. Kholkin ◽  
M. Demartin ◽  
K. G. Brooks ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Piezoelectric Properties ◽  
Ferroelectric Ceramics ◽  
Electromechanical Properties ◽  
Sensors And Actuators ◽  
Driving Field ◽  
Bulk Ceramic ◽  
Quantitative Estimates ◽  
Domain Wall Pinning

ABSTRACTThe piezoelectric and dielectric properties of ferroelectric thin films and ceramics were investigated in detail as a function of the frequency and amplitude of the driving field. A description, which is based on the theories of domain wall pinning by randomly distributed imperfections in magnetic materials, is used to interpret the electromechanical behaviour of several ferroelectric bulk ceramic and thin film compositions. With this approach, it is possible to make quantitative estimates of the domain wall contributions to the electromechanical properties of ferroelectric sensors and actuators.

Crystal Structure and Texture Effects on Piezoelectric and Dielectric Properties of PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
D. Damjanovic ◽  
D. V. Taylor ◽  
N. Setter
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Piezoelectric Coefficient ◽  
Nonlinear Behavior ◽  
Systematic Investigation ◽  
Wall Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Domain Wall Structure

AbstractA systematic investigation of the piezoelectric and dielectric properties of Pb(Zr1-xTix,)O3 (PZT) thin films fabricated by chemical solution deposition was carried out for rhombohedral (x= 0.40), tetragonal (x=0.55) and morphotropic (x=0.47) composition. Each composition was grown with three different crystallographic orientations (textures): “random”, (111) and (100). Nonlinearity (field dependence) of d33 piezoelectric coefficient and dielectric permittivity of the films was studied in detail under subswitching conditions to reveal domain-wall related contributions to the properties. After analyzing for each texture and composition the domain-wall structure, contributions due to domain-wall displacements, and effects of film clamping by the substrate a consistent interpretation of the electro-mechanical properties and nonlinear behavior was proposed. The (100) oriented rhombohedral films show the largest piezoelectric coefficient (intrinsic effect) but limited nonlinearity (domain-wall structure effect) and should therefore be considered as potential candidates for piezoelectric devices.

IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films
Sign in / Sign up

Export Citation Format

Share Document