Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress

2006 ◽  
Author(s):  
M. Gurfinkel ◽  
J. Suehle ◽  
J.B. Bernstein ◽  
Y. Shapira ◽  
A.J. Lelis ◽  
...  
Keyword(s):  
Bias Stress ◽  
Constant Bias ◽  
Negative Constant

Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric

2004 ◽  
Author(s):  
Rino Choi ◽  
Byoung Hun Lee ◽  
Chadwin D. Young ◽  
Jang Hoan Sim ◽  
Gennadi Bersuker
Keyword(s):  
Temperature Effects ◽  
Gate Dielectric ◽  
Bias Stress ◽  
Constant Bias

Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric

2005 ◽  
Vol 44 (4B) ◽  
pp. 2201-2204 ◽  
Author(s):  
Rino Choi ◽  
Byoung Hun Lee ◽  
Chadwin D. Young ◽  
Jang Hoan Sim ◽  
Gennadi Bersuker
Keyword(s):  
Temperature Effects ◽  
Gate Dielectric ◽  
Bias Stress ◽  
Constant Bias

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

2011 ◽  
Vol 679-680 ◽  
pp. 500-503 ◽  
Author(s):  
Aurore Constant ◽  
Nicolas Camara ◽  
Josep Montserrat ◽  
Esther Pausas ◽  
Jean Camassel ◽  
...  
Keyword(s):  
Surface Preparation ◽  
Electrical Stability ◽  
Furnace Process ◽  
Thermal Budget ◽  
Channel Mobility ◽  
Bias Stress ◽  
Low Field ◽  
Conventional Furnace ◽  
Constant Bias

Rapid Thermal Processing (RTP) has been evaluated as an alternative to the conventional furnace process for the gate oxide formation of SiC lateral MOSFETs. We show that this innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to classical oxidation, but also produces a significant improvement of MOSFET performance when using N2O as oxidizing gas. Studying different surface preparation before gate oxidation, we demonstrate that in-situ surface preparation by H2 annealing increases considerably the channel mobility and also the electrical stability with respect to constant bias stress at low-field.

scholarly journals A flexible platform for controlled optical and electrical effects in tailored plasmonic break junctions

Nanophotonics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1391-1400
Author(s):  
Florian Laible ◽  
Kai Braun ◽  
Otto Hauler ◽  
Martin Eberle ◽  
Dieter P. Kern ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Tunneling Current ◽  
Plasmonic Nanostructures ◽  
Break Junction ◽  
Metal Contacts ◽  
Break Junctions ◽  
Constant Bias ◽  
Confocal Scanning ◽  
Atomic Point Contacts

AbstractMechanically controllable break junctions are one suitable approach to generate atomic point contacts and ultrasmall and controllable gaps between two metal contacts. For constant bias voltages, the tunneling current can be used as a ruler to evaluate the distance between the contacts in the sub-1-nm regime and with sub-Å precision. This ruler can be used to measure the distance between two plasmonic nanostructures located at the designated breaking point of the break junction. In this work, an experimental setup together with suitable nanofabricated break junctions is developed that enables us to perform simultaneous gap-dependent optical and electrical characterization of coupled plasmonic particles, more specifically bowtie antennas in the highly interesting gap range from few nanometers down to zero gap width. The plasmonic break junction experiment is performed in the focus of a confocal microscope. Confocal scanning images and current measurements are simultaneously recorded and exhibit an increased current when the laser is focused in the proximity of the junction. This setup offers a flexible platform for further correlated optoelectronic investigations of coupled antennas or junctions bridged by nanomaterials.

scholarly journals A Mass- and Energy-Conserving Numerical Model for a Fractional Gross–Pitaevskii System in Multiple Dimensions

Mathematics ◽  
2021 ◽  
Vol 9 (15) ◽  
pp. 1765
Author(s):  
Adán J. Serna-Reyes ◽  
Jorge E. Macías-Díaz
Keyword(s):  
Initial Conditions ◽  
Type System ◽  
Continuous System ◽  
Mass Conservation ◽  
Continuous Model ◽  
Manuscript Studies ◽  
Multiple Dimensions ◽  
Negative Constant ◽  
Energy Conserving ◽  
Finite Difference Discretization

This manuscript studies a double fractional extended p-dimensional coupled Gross–Pitaevskii-type system. This system consists of two parabolic partial differential equations with equal interaction constants, coupling terms, and spatial derivatives of the Riesz type. Associated with the mathematical model, there are energy and non-negative mass functions which are conserved throughout time. Motivated by this fact, we propose a finite-difference discretization of the double fractional Gross–Pitaevskii system which inherits the energy and mass conservation properties. As the continuous model, the mass is a non-negative constant and the solutions are bounded under suitable numerical parameter assumptions. We prove rigorously the existence of solutions for any set of initial conditions. As in the continuous system, the discretization has a discrete Hamiltonian associated. The method is implicit, multi-consistent, stable and quadratically convergent. Finally, we implemented the scheme computationally to confirm the validity of the mass and energy conservation properties, obtaining satisfactory results.

Hot-Wire CVD Poly-Silicon Films for Thin Film Devices

1998 ◽  
Vol 507 ◽  
Author(s):  
J.K. Rath ◽  
F.D. Tichelaar ◽  
H. Meiling ◽  
R.E.I. Schropp
Keyword(s):  
Defect Density ◽  
Initial Growth ◽  
Oriented Growth ◽  
Compact Structure ◽  
High Hydrogen ◽  
New Approach ◽  
Intrinsic Nature ◽  
Bias Stress ◽  
Hydrogen Dilution ◽  
Long Duration

ABSTRACTSolar cell using profiled poly-Si:H by HWCVD as i-layer in the configuration SS/n-µSi:H(PECVD)/i-poly-Si:H(HWCVD)/p-µc-Si:H(PECVD)/ITO showed 3.7% efficiency. A current of 23.6 mA/cm2 was generated in only 1.5 µm thick poly-Si:H i-layer grown at ∼5Å/s. TFTs made with the poly-Si:H films (grown at ≥ 9Å/s) exhibited remarkable stability to long duration of 23 hours of gate bias stress of ∼lMV/cm. A saturation mobility of 1.5 cm2/Vs for the TFT has been achieved. Films made at low hydrogen dilution (Poly2) showed device quality (purely intrinsic nature, ambipolar diffusion length of 568 nm, only (220) oriented growth and low ESR defect density of <1017/cm3with complete absence of signal due to conduction electrons) but with an incubation phase of amorphous initial growth, whereas the films made at high hydrogen dilution (Polyl) had a polycrystalline initial growth, though with higher defect density, incorporated oxygen and randomly oriented grains. Poly2 films are compact and hydrogen bonding is at compact Si-H sites manifested as 2000 cm−1IR vibration and high temperature hydrogen evolution peak. Exchange interaction of spins and spin pairing are observed while increasing defects in such a compact structure. A new approach has been used to integrate these two regimes of growth to make profiled poly-Si:H layers. The new layers show good electronic properties as well as complete elimination of incubation phase.

Physics of Below Threshold Current Distribution in a-Si:H TFTs

1996 ◽  
Vol 424 ◽  
Author(s):  
H. C. Slade ◽  
M. S. Shur ◽  
S. C. Deane ◽  
M. Hack
Keyword(s):  
Amorphous Silicon ◽  
Threshold Current ◽  
Gate Insulator ◽  
Subthreshold Slope ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Spice Model ◽  
Active Layers ◽  
Insulator Interface ◽  
Current Activation

AbstractWe have examined the material properties and operation of bottom-gate amorphous silicon thin film transistors (TFTs) using temperature measurements of the subthreshold current. From the derivative of current activation energy with respect to gate bias, we have deduced information about the density of states for several different transistor types. We have demonstrated that, in TFTs with thin active layers and top nitride passivation, the current conduction channel moves from the gate insulator interface to the passivation insulator interface as the transistor switches off. Our 2D simulations clarify these experimental results. We have examined the effect of bias stress on the transistors and analyzed the resulting reduction in the subthreshold slope. Based on these results, we have extended our analytic amorphous silicon TFI SPICE model to include the effect of bias stress.

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