Detection and Characterization of Single Near-Interface Oxide Traps with the Charge Pumping Method

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa.2018.8452495 ◽

2018 ◽

Author(s):

Toshiaki Tsuchiya ◽

Masahiro Hori ◽

Yukinori Ono

Keyword(s):

Charge Pumping ◽

Oxide Traps

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Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide traps

IEEE Transactions on Electron Devices ◽

10.1109/16.293349 ◽

1994 ◽

Vol 41 (7) ◽

pp. 1213-1216 ◽

Cited By ~ 147

Author(s):

R.E. Paulsen ◽

M.H. White

Keyword(s):

Charge Pumping ◽

Oxide Traps

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Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements

ECS Transactions ◽

10.1149/06905.0219ecst ◽

2015 ◽

Vol 69 (5) ◽

pp. 219-225 ◽

Cited By ~ 3

Author(s):

Y. Fujino ◽

K. Kita

Keyword(s):

Quantitative Characterization ◽

Mos Capacitors ◽

Capacitance Measurements ◽

Transient Capacitance ◽

Oxide Traps

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Characterization of MOSFET Interface States Using the Charge Pumping Technique

Hot Carrier Degradation in Semiconductor Devices ◽

10.1007/978-3-319-08994-2_8 ◽

2014 ◽

pp. 231-255 ◽

Cited By ~ 4

Author(s):

Thomas Aichinger ◽

Michael Nelhiebel

Keyword(s):

Interface States ◽

Charge Pumping

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Observation and characterization of near-interface oxide traps with C-V techniques

IEEE Transactions on Electron Devices ◽

10.1109/16.469410 ◽

1995 ◽

Vol 42 (11) ◽

pp. 2004-2009 ◽

Cited By ~ 47

Author(s):

N.L. Cohen ◽

R.E. Paulsen ◽

M.H. White

Keyword(s):

Oxide Traps

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Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures

Solid-State Electronics ◽

10.1016/0038-1101(95)00156-5 ◽

1996 ◽

Vol 39 (4) ◽

pp. 563-570 ◽

Cited By ~ 47

Author(s):

D. Bauza ◽

G. Ghibaudo

Keyword(s):

Analytical Study ◽

Charge Pumping ◽

Oxide Traps ◽

Mos Structures

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Physical characterization of hot-electron-induced MOSFET degradation through an improved approach to the charge-pumping technique

IEEE Transactions on Electron Devices ◽

10.1109/16.144681 ◽

1992 ◽

Vol 39 (8) ◽

pp. 1895-1901 ◽

Cited By ~ 16

Author(s):

C. Bergonzoni ◽

G.D. Libera

Keyword(s):

Physical Characterization ◽

Hot Electron ◽

Charge Pumping

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Characterization of Hot Electron Induced Interface States in LATID MOS Devices Using an Improved Charge Pumping Method

10.7567/ssdm.1993.a-4-3 ◽

1993 ◽

Author(s):

Steve S. Chung ◽

J.-J. Yang ◽

C.-H. Tang ◽

P.-C. Chou

Keyword(s):

Interface States ◽

Hot Electron ◽

Charge Pumping ◽

Mos Devices

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Characterization of Oxide Traps in 28 nm nMOSFETs with Different Uniaxial Tensile Stress by Utilizing Random Telegraph Noise (RTN)

10.7567/ssdm.2012.ps-3-25 ◽

2012 ◽

Author(s):

B. C. Wang ◽

S. L. Wu ◽

C. Y. Wu ◽

C. W. Huang ◽

T. Y. Lu ◽

...

Keyword(s):

Tensile Stress ◽

Uniaxial Tensile ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Uniaxial Tensile Stress ◽

Oxide Traps ◽

28 Nm

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System for extensive characterization of MOS and SOI MOS structures by means of charge pumping

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) ◽

10.1109/iccdcs.2002.1004090 ◽

2003 ◽

Author(s):

S. Szostak ◽

L. Lukasiak ◽

A. Jakubowski

Keyword(s):

Charge Pumping ◽

Mos Structures

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Detection and characterization of single MOS interface traps by the charge pumping method

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521662 ◽

2016 ◽

Author(s):

Toshiaki Tsuchiya

Keyword(s):

Interface Traps ◽

Charge Pumping

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