New capability of laser ablation in failure analysis

2013 ◽  
Author(s):  
C.N. Liew ◽  
K.L. Khoo ◽  
L.S. Tiang ◽  
Y.J. Ng
Keyword(s):  
Laser Ablation ◽  
Failure Analysis

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

scholarly journals Pairing Laser Ablation and Xe Plasma FIB-SEM: An Approach for Precise End-Pointing in Large-Scale Physical Failure Analysis in the Semiconductor Industry

2021 ◽  
Author(s):  
Rodrigo Delgadillo Blando ◽  
Lukáš Hladík ◽  
Jozef Vincenc Oboňa ◽  
Tomáš Borůvka ◽  
Martin Burán ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Failure Analysis ◽  
Cross Sections ◽  
Large Scale ◽  
Bulk Material ◽  
Semiconductor Industry ◽  
Surface Polishing ◽  
Area Of Interest ◽  
Microelectronic Devices ◽  
Correlation Data

Abstract In this work we present a large-volume workflow for fast failure analysis of microelectronic devices that combines a stand-alone ps-laser ablation tool with a SEM/Xe Plasma FIB system. In this synergy, the ps-laser is used to quickly remove large volumes of bulk material while the SEM/Xe Plasma FIB is used for precise end-pointing to the feature of interest and fine surface polishing after laser. The concept of having a stand-alone laser tool obeys the logic of maximizing productivity as both systems can work simultaneously and continuously. As application examples we first present a full workflow to prepare an artefact-free, delamination-free cross-section in an AMOLED mobile display. We also present applications examples that require cm-sized long cuts to cut through whole microelectronic devices, or removal of cubic-mm of material to prepare mm-sized cross-sections in packages. We discuss a way how to implement correlation data across the laser and FIBSEM platforms through SYNOPSYS Avalon SW allowing precise navigation to the area of interest using layout circuit overlays. We also show an example of image bitmap overlay to navigate across platforms and end-pointing.

Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks

2020 ◽  
Author(s):  
Marek Tuček ◽  
Martin Búran ◽  
Rostislav Váňa ◽  
Lukáš Hladík ◽  
Jozef Vincenc Oboňa
Keyword(s):  
Laser Ablation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Process Time ◽  
Device Layer ◽  
Chemical Methods ◽  
Speed Up ◽  
Oled Display

Abstract As the semiconductor industry demands higher throughput for failure analysis, there is a constant need to rapidly speed up the sample preparation workflows. Here we present extended capabilities of the standard Xe plasma Focused Ion Beam failure analysis workflows by implementing a standalone laser ablation tool. Time-to-sample advantages of such workflow is shown on four distinct applications: cross-sectioning of a large solder ball, cross-sectioning of a deeply buried wire bond, cross-sectioning of the device layer of an OLED display, and removing the MEMS silicon cap to access underlying structures. In all of these workflows we have shown significant decrease in required process time while altogether avoiding the disadvantages of corresponding mechanical and chemical methods.

Laser Decapsulation of Transfer Molded Plastic Packages for Failure Analysis

2002 ◽  
Author(s):  
George Carter
Keyword(s):  
Laser Ablation ◽  
Product Development ◽  
Failure Analysis ◽  
Nd:Yag Laser ◽  
Temperature Sensitive ◽  
Passive Components ◽  
Limited Ability ◽  
Plastic Packages ◽  
Magnet Wire ◽  
Acid Etch

Abstract Decapsulation of plastic packaged components is frequently necessary for failure analysis or product development. Conventional techniques utilize an acid etch process, which is not compatible with copper and other acid-sensitive materials. There is limited ability to alter etch geometry or selectively decapsulate individual circuit elements. Laser ablation using a raster scanned Nd:YAG laser was used for selective decapsulation of temperature sensitive passive components in a PDIP packaged DC-DC converter. Copper welds, nylon insulated ferrite, and polyesterimide insulated magnet wire were decapsulated without damage, allowing failure analysis of a miniature transformer and its associated welded leads.

Evaluation of Alternative Preparation Methods for Failure Analysis at Modern Chip and Package Technologies

2001 ◽  
Author(s):  
A. Dübotzky ◽  
B. Krüger
Keyword(s):  
Laser Ablation ◽  
Laser Pulse ◽  
Failure Analysis ◽  
Pulse Energy ◽  
Repetition Rate ◽  
Pulse Repetition Rate ◽  
Laser Pulse Energy ◽  
Preparation Methods ◽  
Silicon Thickness ◽  
Gold Wires

Abstract We evaluated laser ablation and sandblasting as preparation methods for package related failures and for backside analysis of ICs. With laser ablation we uncovered gold wedges on an internal board of a PLFBGA package without damage of the gold wires and the board metallization. This was possible by optimization of the laser pulse energy and the pulse repetition rate and by limitation of the ablation area. Sandblasting showed to be a gentle way for backside thinning down to 60 μm silicon thickness. For a surface smoothness sufficient for IR imaging a subsequent planarization treatment is necessary.

Sample Preparation Strategies for Fast and Effective Failure Analysis of 3D Devices

2013 ◽  
Author(s):  
Laurens Kwakman ◽  
Marcus Straw ◽  
Gaëlle Coustillier ◽  
Marc Sentis ◽  
Jens Beyersdorfer ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Material Removal ◽  
Region Of Interest ◽  
Tem Analysis ◽  
Thin Lamella ◽  
Sem Imaging ◽  
Fast Removal ◽  
Quality Surface

Abstract In this paper different sample preparation strategies for fast and efficient failure analysis of 3D devices are reviewed and further explored. It will be shown that a combined workflow using laser ablation and plasma FIB milling provides best flexibility to cover most of the FA use cases. Laser ablation guarantees fast, coarse material removal and the subsequent plasma FIB milling provides fast removal of any damage or imperfections induced by the laser ablation, precise navigation to the region of interest, a high quality surface finish allowing direct SEM imaging and analytics such as EBSD and, if required the preparation of a thin lamella for TEM analysis.

Decapsulation of Copper Bonded Plastic Encapsulated Integrated Circuits Utilizing Laser Ablation and Mixed Acid Chemistry

2010 ◽  
Author(s):  
Jake E. Klein ◽  
Lucas Copeland
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Packaging Material ◽  
Device Characterization ◽  
Mixed Acid ◽  
Root Cause ◽  
Analysis Methodology ◽  
Bond Wires ◽  
Root Cause Failure Analysis

Abstract By utilizing a NdYAG lamp pumped marking laser, along with unique mixes of specific acids, reproducible decapsulation of copper bonded devices without damage to the bond wires, packaging material, or to the silicon die circuitry itself can be achieved. With the copper bond wires, die, or substrate exposed, typical failure analysis methodology can then be applied to drive root cause failure analysis or device characterization.

Failure Analysis on Integrated Power Devices

2012 ◽  
Author(s):  
Arthur Chiang ◽  
David Le ◽  
Huixian Wu
Keyword(s):  
Laser Ablation ◽  
Failure Analysis ◽  
Power Management ◽  
New Technique ◽  
Development Phase ◽  
Power Devices ◽  
Plasma Etch ◽  
Compact Size ◽  
A New Technique

Abstract Integrated power devices (IPD, IC+MOSFETs) have gained popularity for their excellent power management performance and compact size. During the development, it was soon found that exposing the multi-die device for debug could be challenging. In the article, we will show how the traditional decapsulation method fails to expose the device properly for follow up analysis. We will then present a new technique using laser ablation + chemical/plasma etch that proves to work for IPD products. We will then present a complete FA example combining this decapsulation technique and many other advanced FA techniques to solve an elusive failure during the development phase of an IPD product.

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