Experimental research on TF SOI CMOS ring oscillator with EM NMOSFET and AM PMOSFET assemblies at high temperature

2009 ◽  
Author(s):  
Haipeng Zhang ◽  
Lijian Ma ◽  
Tongli Wei ◽  
Yaolan Feng ◽  
Zhengfan Zhang
Keyword(s):  
High Temperature ◽  
Experimental Research ◽  
Ring Oscillator ◽  
Soi Cmos

High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000227-000232
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
A. Schmidt ◽  
W. Heiermann ◽  
H. Kappert ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Maximum Temperature ◽  
Cmos Process ◽  
Ring Oscillators ◽  
Circuit Function ◽  
Soi Cmos

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 °C. In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metalization with excellent reliability concerning electromigration, voltage independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were also characterized up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.

High Temperature Characterization up to 450°C of MOSFETs and Basic Circuits Realized in a Silicon-on-Insulator (SOI) CMOS Technology

2013 ◽  
Vol 10 (2) ◽  
pp. 67-72 ◽  
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
A. Schmidt ◽  
W. Heiermann ◽  
H. Kappert ◽  
...  
Keyword(s):  
High Temperature ◽  
Band Gap ◽  
Output Voltage ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Maximum Temperature ◽  
Cmos Process ◽  
Soi Cmos

Standard bulk CMOS technology targets operating temperatures of not more than 175°C. Silicon-on-insulator technologies are commonly used up to 250°C. In this work, we evaluate the limit for electronic circuit function realized in thin film SOI technologies for even higher temperatures. At Fraunhofer IMS, a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metallization with excellent reliability concerning electromigration, as well as voltage-independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of an NMOSFET transistor and a PMOSFET transistor are studied up to 450°C. In a second step, we investigate the functionality of a ring oscillator (representing a digital circuit) and a band gap reference as an example of a simple analog component. The frequency and the current consumption of the ring oscillator, as well as the output voltage and the current of the band gap reference, are characterized up to 450°C. We find that the ring oscillator still oscillates at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the band gap reference is in the specified range (change < 3%) up to 250°C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS technology to its real maximum temperature limits.

Experimental Research on Bond Strength between Rebar and Concrete after High Temperature

2011 ◽  
Vol 71-78 ◽  
pp. 1057-1061 ◽  
Author(s):  
Ke Fang Yin ◽  
Yang Han ◽  
Yi Liu
Keyword(s):  
Reinforced Concrete ◽  
High Temperature ◽  
Bond Strength ◽  
Experimental Research ◽  
Bonding Strength ◽  
Different Temperatures ◽  
Ultimate Bond Strength

With the centrally pulling-out test, the bond strength of reinforced concrete is measured with different temperatures and different cooling ways after high temperature; and the ultimate bond strength and slip of reinforced and concrete under different conditions are analyzed. The results show that the bonding strength declines gradually with the increase of temperature, and the ultimate slippage also decreases gradually.

A High Temperature SOI CMOS NO[sub 2] Sensor

2011 ◽  
Author(s):  
S. Z. Ali ◽  
W. O. Ho ◽  
M. F. Chowdhury ◽  
J. A. Covington ◽  
P. Moseley ◽  
...  
Keyword(s):  
High Temperature ◽  
Soi Cmos

Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

2018 ◽  
Vol 47 (3) ◽  
pp. 197-200
Author(s):  
A. S. Benediktov ◽  
N. A. Shelepin ◽  
P. V. Ignatov ◽  
A. A. Mikhailov ◽  
A. G. Potupchik
Keyword(s):  
High Temperature ◽  
Dynamic Characteristics ◽  
Soi Cmos

scholarly journals Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

2005 ◽  
Vol 15 ◽  
pp. 27-32 ◽  
Author(s):  
T Iwaki ◽  
J A Covington ◽  
F Udrea ◽  
S Z Ali ◽  
P K Guha ◽  
...  
Keyword(s):  
High Temperature ◽  
Gas Sensors ◽  
High Temperature Gas ◽  
Soi Cmos

The Research of the Chemistry Composition of High Temperature Oxidization under Loads for the Cr5Mo Alloy

2011 ◽  
Vol 694 ◽  
pp. 729-732
Author(s):  
Shun Qing Chen ◽  
Yu Min Ma
Keyword(s):  
High Temperature ◽  
Experimental Research ◽  
Experimental Results ◽  
The Difference

The chemistry composition of the high temperature oxidization under loads has been analyzed for the Cr5Mo alloy in this paper. The experimental research to the Fe, Cr and O elements have also been done. The difference between loads and no loads has been emphasized to the chemistry elements of the Cr5Mo alloy. The experimental results showed that the temperature couldn’t change the rate of the chemistry elements, but the loads could change them. The chemistry elements Fe ，Mo and Cr could change more obvious than other elements of the Cr5Mo alloy in this paper.

The art of high temperature FD-SOI CMOS

2003 ◽  
Author(s):  
L. Demeus ◽  
P. Delatte ◽  
V. Dessard ◽  
S. Adriaensen ◽  
A. Viviani ◽  
...  
Keyword(s):  
High Temperature ◽  
Soi Cmos
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