HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)
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Reliability physics and electronics design for high operating temperatures

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827476 ◽

2005 ◽

Author(s):

B. Peat

Keyword(s):

Operating Temperatures ◽

Electronics Design

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Matched expansion probe cards

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827490 ◽

2003 ◽

Author(s):

E. Ehlermann

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Long-term stability and thermal cycling of thermocouple contacts to Si up to 350°C

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827469 ◽

2003 ◽

Cited By ~ 1

Author(s):

H. Ernst ◽

L. Rauscher ◽

G. Bahr ◽

E. Muller ◽

W.A. Kaysser

Keyword(s):

Thermal Cycling ◽

Term Stability ◽

Long Term Stability

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The art of high temperature FD-SOI CMOS

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827472 ◽

2003 ◽

Cited By ~ 1

Author(s):

L. Demeus ◽

P. Delatte ◽

V. Dessard ◽

S. Adriaensen ◽

A. Viviani ◽

...

Keyword(s):

High Temperature ◽

Soi Cmos

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Thin film diamond devices for high temperature electronic applications: hydrogen doped structures

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827496 ◽

2003 ◽

Author(s):

Hui Jin ◽

L.Y. Pang ◽

M.D. Whitfield ◽

R.B. Jackman

Keyword(s):

Thin Film ◽

High Temperature ◽

High Temperature Electronic

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The influence of the Hall scattering factor on the determination of activation energies of the nitrogen donors in 4H-SiC epitaxial layers

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827494 ◽

2003 ◽

Author(s):

G. Rutsch ◽

R.P. Devaty ◽

W.J. Chovke

Keyword(s):

Activation Energies ◽

Epitaxial Layers ◽

Scattering Factor ◽

Nitrogen Donors

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The use of high temperature electronics in downhole applications

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827480 ◽

2003 ◽

Cited By ~ 5

Author(s):

J.J. den Boer

Keyword(s):

High Temperature ◽

High Temperature Electronics

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The Arrhenius relation for electronics in extreme temperature conditions

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827344 ◽

2003 ◽

Author(s):

J.V. Manca ◽

W. Wondrak ◽

K. Croes ◽

W. De Ceuninck ◽

V. D'Haeger ◽

...

Keyword(s):

Extreme Temperature ◽

Temperature Conditions ◽

Arrhenius Relation

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High-temperature characterization of a PD SOI CMOS process with LDMOS and lateral bipolar structures

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827467 ◽

2003 ◽

Cited By ~ 2

Author(s):

S. Adriaensen ◽

V. Dessard ◽

P. Delatte ◽

J.R. Querol ◽

D. Flandre ◽

...

Keyword(s):

High Temperature ◽

Cmos Process ◽

Soi Cmos

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Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) ◽

10.1109/hiten.1999.827468 ◽

2003 ◽

Cited By ~ 1

Author(s):

T. Rudenko ◽

V. Lysenko ◽

V. Kilchytska ◽

A. Rudenko ◽

J.-P. Colinge

Keyword(s):

High Temperature ◽

Diffusion Mechanism

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HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By AEA Technol

Reliability physics and electronics design for high operating temperatures

Matched expansion probe cards

Long-term stability and thermal cycling of thermocouple contacts to Si up to 350°C

The art of high temperature FD-SOI CMOS

Thin film diamond devices for high temperature electronic applications: hydrogen doped structures

The influence of the Hall scattering factor on the determination of activation energies of the nitrogen donors in 4H-SiC epitaxial layers

The use of high temperature electronics in downhole applications

The Arrhenius relation for electronics in extreme temperature conditions

High-temperature characterization of a PD SOI CMOS process with LDMOS and lateral bipolar structures

Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)
Latest Publications