A High Temperature SOI CMOS NO[sub 2] Sensor

2011 ◽  
Author(s):  
S. Z. Ali ◽  
W. O. Ho ◽  
M. F. Chowdhury ◽  
J. A. Covington ◽  
P. Moseley ◽  
...  
Keyword(s):  
High Temperature ◽  
Soi Cmos

Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

2018 ◽  
Vol 47 (3) ◽  
pp. 197-200
Author(s):  
A. S. Benediktov ◽  
N. A. Shelepin ◽  
P. V. Ignatov ◽  
A. A. Mikhailov ◽  
A. G. Potupchik
Keyword(s):  
High Temperature ◽  
Dynamic Characteristics ◽  
Soi Cmos

scholarly journals Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

2005 ◽  
Vol 15 ◽  
pp. 27-32 ◽  
Author(s):  
T Iwaki ◽  
J A Covington ◽  
F Udrea ◽  
S Z Ali ◽  
P K Guha ◽  
...  
Keyword(s):  
High Temperature ◽  
Gas Sensors ◽  
High Temperature Gas ◽  
Soi Cmos

The art of high temperature FD-SOI CMOS

2003 ◽  
Author(s):  
L. Demeus ◽  
P. Delatte ◽  
V. Dessard ◽  
S. Adriaensen ◽  
A. Viviani ◽  
...  
Keyword(s):  
High Temperature ◽  
Soi Cmos

Ultra-high temperature (>300°C) suspended thermodiode in SOI CMOS technology

2010 ◽  
Vol 41 (9) ◽  
pp. 540-546 ◽  
Author(s):  
S. Santra ◽  
F. Udrea ◽  
P.K. Guha ◽  
S.Z. Ali ◽  
I. Haneef
Keyword(s):  
High Temperature ◽  
Cmos Technology ◽  
Ultra High Temperature ◽  
Soi Cmos

SOI-CMOS precision front-end amplifier for wide range and high temperature (200 °C) operation of smart microsensors

2004 ◽  
Vol 112 (2-3) ◽  
pp. 388-394
Author(s):  
Hidekuni Takao ◽  
Fumie Ina ◽  
Toshiaki Douzaka ◽  
Kazuaki Sawada ◽  
Makoto Ishida
Keyword(s):  
High Temperature ◽  
Front End ◽  
Wide Range ◽  
Soi Cmos

High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000227-000232
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
A. Schmidt ◽  
W. Heiermann ◽  
H. Kappert ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Maximum Temperature ◽  
Cmos Process ◽  
Ring Oscillators ◽  
Circuit Function ◽  
Soi Cmos

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 °C. In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metalization with excellent reliability concerning electromigration, voltage independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were also characterized up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.

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