Gate-Oxide Reliability on CMOS Analog Amplifiers in a 130-nm Low-Voltage CMOS Processes

13th International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2006.250994 ◽

2006 ◽

Cited By ~ 3

Author(s):

Jung-sheng Chen ◽

Ming-dou Ker

Keyword(s):

Low Voltage ◽

Gate Oxide ◽

Oxide Reliability ◽

Cmos Processes

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A New Architecture for Charge Pump Circuit Without Suffering Gate-Oxide Reliability in Low-Voltage CMOS Processes

2007 14th IEEE International Conference on Electronics, Circuits and Systems ◽

10.1109/icecs.2007.4510966 ◽

2007 ◽

Author(s):

Tzu-Ming Wang ◽

Wan-Yi Shen ◽

Ming-Dou Ker

Keyword(s):

Low Voltage ◽

Charge Pump ◽

Gate Oxide ◽

Oxide Reliability ◽

Charge Pump Circuit ◽

Cmos Processes

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Design of Charge Pump Circuit With Consideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2006.872704 ◽

2006 ◽

Vol 41 (5) ◽

pp. 1100-1107 ◽

Cited By ~ 144

Author(s):

M.-D. Ker ◽

S.-L. Chen ◽

C.-S. Tsai

Keyword(s):

Low Voltage ◽

Charge Pump ◽

Gate Oxide ◽

Oxide Reliability ◽

Charge Pump Circuit ◽

Cmos Processes

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Low voltage SILC and P- and N-MOSFET gate oxide reliability

Microelectronics Reliability ◽

10.1016/j.microrel.2004.08.002 ◽

2005 ◽

Vol 45 (3-4) ◽

pp. 479-485 ◽

Cited By ~ 12

Author(s):

C. Petit ◽

A. Meinertzhagen ◽

D. Zander ◽

O. Simonetti ◽

M. Fadlallah ◽

...

Keyword(s):

Low Voltage ◽

Gate Oxide ◽

Oxide Reliability

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Impact of MOSFET Gate-Oxide Reliability on CMOS Operational Amplifier in a 130-nm Low-Voltage Process

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2008.922016 ◽

2008 ◽

Vol 8 (2) ◽

pp. 394-405 ◽

Cited By ~ 8

Author(s):

Ming-Dou Ker ◽

Jung-Sheng Chen

Keyword(s):

Operational Amplifier ◽

Low Voltage ◽

Gate Oxide ◽

Oxide Reliability

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The Impact of Gate-Oxide Breakdown on Common-Source Amplifiers With Diode-Connected Active Load in Low-Voltage CMOS Processes

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.906938 ◽

2007 ◽

Vol 54 (11) ◽

pp. 2860-2870 ◽

Cited By ~ 4

Author(s):

Jung-Sheng Chen ◽

Ming-Dou Ker

Keyword(s):

Low Voltage ◽

Gate Oxide ◽

Common Source ◽

Oxide Breakdown ◽

Active Load ◽

The Impact ◽

Cmos Processes

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A new charge pump circuit dealing with gate-oxide reliability issue in low-voltage processes

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512) ◽

10.1109/iscas.2004.1328196 ◽

2004 ◽

Author(s):

Ming-Dou Ker ◽

Shih-Lun Chen ◽

Chia-Sheng Tsai

Keyword(s):

Low Voltage ◽

Charge Pump ◽

Gate Oxide ◽

Oxide Reliability ◽

Reliability Issue ◽

Charge Pump Circuit

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Impact of MOSFET gate-oxide reliability on CMOS operational amplifiers in a 130-nm low-voltage CMOS process

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493123 ◽

2005 ◽

Cited By ~ 2

Author(s):

Jung-Sheng Chen ◽

Ming-Dou Ker

Keyword(s):

Low Voltage ◽

Gate Oxide ◽

Operational Amplifiers ◽

Cmos Process ◽

Oxide Reliability ◽

Cmos Operational Amplifiers

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Drain Bias Dependence of Gate Oxide Reliability in Conventional and Asymmetrical Channel MOSFETs in the Low Voltage Regime

30th European Solid-State Device Research Conference ◽

10.1109/essderc.2000.194730 ◽

2000 ◽

Cited By ~ 2

Author(s):

K.G. Anil ◽

S. Mahapatra ◽

I. Eisele ◽

V.R. Rao ◽

J. Vasi

Keyword(s):

Low Voltage ◽

Gate Oxide ◽

Oxide Reliability ◽

Drain Bias

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Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

Microelectronics Reliability ◽

10.1016/0026-2714(95)93078-o ◽

1995 ◽

Vol 35 (3) ◽

pp. 603-608 ◽

Cited By ~ 16

Author(s):

S.R. Anderson ◽

R.D. Schrimpf ◽

K.F. Galloway ◽

J.L. Titus

Keyword(s):

Ion Irradiation ◽

Gate Oxide ◽

Heavy Ion ◽

Irradiation Effects ◽

Power Mosfets ◽

Heavy Ion Irradiation ◽

Oxide Reliability

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The effect of STI and active length on dual gate oxide reliability

2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) ◽

10.1109/iemt.2008.5507827 ◽

2008 ◽

Author(s):

Ng Hong Seng

Keyword(s):

Gate Oxide ◽

Active Length ◽

Oxide Reliability ◽

Dual Gate

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