Neutron induced oxide degradation in MOSFET structures

2004 ◽  
Author(s):  
D.K. Sharma ◽  
A.N. Chandorkar ◽  
S.J. Vaidya
Keyword(s):  
Oxide Degradation

scholarly journals Comprehensive Analytical Modelling of an Absolute pH Sensor

Sensors ◽  
2021 ◽  
Vol 21 (15) ◽  
pp. 5190
Author(s):  
Cristina Medina-Bailon ◽  
Naveen Kumar ◽  
Rakshita Pritam Singh Dhar ◽  
Ilina Todorova ◽  
Damien Lenoble ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Numerical Experiments ◽  
Ph Sensor ◽  
Hafnium Dioxide ◽  
Matlab Code ◽  
Oxide Degradation ◽  
Depletion Width ◽  
Ion Activity ◽  
The Absolute ◽  
The Impact

In this work, we present a comprehensive analytical model and results for an absolute pH sensor. Our work aims to address critical scientific issues such as: (1) the impact of the oxide degradation (sensing interface deterioration) on the sensor’s performance and (2) how to achieve a measurement of the absolute ion activity. The methods described here are based on analytical equations which we have derived and implemented in MATLAB code to execute the numerical experiments. The main results of our work show that the depletion width of the sensors is strongly influenced by the pH and the variations of the same depletion width as a function of the pH is significantly smaller for hafnium dioxide in comparison to silicon dioxide. We propose a method to determine the absolute pH using a dual capacitance system, which can be mapped to unequivocally determine the acidity. We compare the impact of degradation in two materials: SiO2 and HfO2, and we illustrate the acidity determination with the functioning of a dual device with SiO2.

scholarly journals Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements

2005 ◽  
Vol 80 ◽  
pp. 182-185 ◽  
Author(s):  
S. Aresu ◽  
W. De Ceuninck ◽  
R. Degraeve ◽  
B. Kaczer ◽  
G. Knuyt ◽  
...  
Keyword(s):  
High Resolution ◽  
High Speed ◽  
In Situ Measurements ◽  
Degradation Mechanisms ◽  
Oxide Degradation

Characterization of tunnel-oxide degradation due to plasma field oxide recess in flash memory devices

2012 ◽  
Vol 520 (15) ◽  
pp. 5007-5010 ◽  
Author(s):  
Jeungyun Lee ◽  
Dong-Kwon Kim ◽  
Gyung-Jin Min ◽  
Ilsub Chung
Keyword(s):  
Flash Memory ◽  
Memory Devices ◽  
Oxide Degradation ◽  
Field Oxide

Practical manufacturing technique for reducing charge-induced gate oxide degradation during ion implantation

1999 ◽  
Author(s):  
Kenneth G. Moerschel ◽  
W. A. Possanza ◽  
James Sung ◽  
M. A. Prozonic ◽  
T. Long ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Gate Oxide ◽  
Manufacturing Technique ◽  
Oxide Degradation

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

2016 ◽  
Vol 64 ◽  
pp. 415-418 ◽  
Author(s):  
S. Mbarek ◽  
F. Fouquet ◽  
P. Dherbecourt ◽  
M. Masmoudi ◽  
O. Latry
Keyword(s):  
Short Circuit ◽  
Gate Oxide ◽  
Oxide Degradation ◽  
Circuit Aging

Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

2022 ◽  
pp. 1-1
Author(s):  
Minghang Xie ◽  
Pengju Sun ◽  
Kaihong Wang ◽  
Quanming Luo ◽  
Xiong Du
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation ◽  
Degradation Monitoring ◽  
Gate Charge
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