Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures

1999 ◽  
Author(s):  
J.M.P. Yue ◽  
W.K. Chim ◽  
B.J. Cho ◽  
D.S.H. Chan ◽  
W.H. Qin ◽  
...  
Keyword(s):  
Channel Width ◽  
Hot Carrier ◽  
Width Effect ◽  
Hot Carrier Degradation

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK
Keyword(s):  
Hot Carrier ◽  
The Impact ◽  
Hot Carrier Degradation

Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs

2021 ◽  
Vol 68 (4) ◽  
pp. 1804-1809
Author(s):  
Bernhard Ruch ◽  
Gregor Pobegen ◽  
Tibor Grasser
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Degradation

Investigation of hot carrier degradation in asymmetric nDeMOS transistors

2008 ◽  
Vol 48 (4) ◽  
pp. 508-513 ◽  
Author(s):  
Qingxue Wang ◽  
Lanxia Sun ◽  
Andrew Yap
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Degradation
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