Identification of process defects using back side emission microscopy

2002 ◽  
Author(s):  
Chun-Sheng Liu ◽  
Charng-E Peng ◽  
Chen-Chung Hsu
Keyword(s):  
Back Side ◽  
Emission Microscopy ◽  
Side Emission

Back side emission microscopy for failure analysis

1996 ◽  
Author(s):  
Nevil M. Wu ◽  
Kenneth Tang ◽  
James H. Lin
Keyword(s):  
Failure Analysis ◽  
Back Side ◽  
Emission Microscopy ◽  
Side Emission

Failure Analysis From Back Side of Die

1996 ◽  
Author(s):  
N.M. Wu ◽  
K. Weaver ◽  
J.H. Lin
Keyword(s):  
Failure Analysis ◽  
Fault Isolation ◽  
Back Side ◽  
Induced Current ◽  
Front Side ◽  
Root Cause ◽  
Isolation Techniques ◽  
Cause Of Failure ◽  
Emission Microscopy ◽  
Side Emission

Abstract With increasing complexity of circuit layout on the die and special packages in which the die are flipped over, failure analysis on the die front side, sometimes, can not solve the problems or is not possible by opening the front side of the package to expose the die front side. This paper discusses fault isolation techniques and procedures used on the back side of the die. The two major back side techniques, back side emission microscopy and back side OBIC (Optical Beam Induced Current), are introduced and applied to solve real problems in failure analysis. A back side decapsulation technique and procedure are also introduced. Last, several examples are given. The results indicated that the success in finding root cause of failure is greatly increased when these techniques are used in addition to the traditional front side analysis approaches.

Scanning Optical Microscopy Application in Micron® Memory Devices

2005 ◽  
Author(s):  
Wong Yaw Yuan ◽  
T.L. Edmund Poh ◽  
David Lam
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Memory Devices ◽  
Back Side ◽  
Induced Voltage ◽  
Scanning Optical Microscopy ◽  
Side Emission ◽  
Complex Circuits

Abstract The migration to smaller geometries has translated to an increase in the number of transistors possible in each integrated circuit. Failure analysis of such complex circuits presents a major challenge to the semiconductor industry and is a driving force behind the considerable interest in nondestructive, cost-efficient, “shortcut” fault isolation techniques. In this paper, we present the application of thermal-induced voltage alteration (TIVA) for failure analysis of 0.11µm technology memory devices and demonstrate the key aspects of this technique. The back side TIVA results are compared with analysis performed using back side emission microscopy (EMMI), and the limitations of EMMI are highlighted. The advantages and limitations of the TIVA technique are also discussed.

Packaging Issues and Solutions for Ultra-Low Power, High Efficiency GaN micro-LEDs for a Battery Free, Sub-mm2, Tetherless, Smart IoT System

2020 ◽  
Vol 2020 (1) ◽  
pp. 000181-000184
Author(s):  
F.R. Libsch ◽  
S.W. Bedell ◽  
B.C. Webb ◽  
A. Paidimarri
Keyword(s):  
Low Power ◽  
Flip Chip ◽  
High Efficiency ◽  
Low Voltage ◽  
Cost Effective ◽  
Back Side ◽  
Ultra Low Power ◽  
Emission Area ◽  
Sensor Platform ◽  
Side Emission

Abstract This paper discusses some design and implementation issues related to GaN micro-LED (μLED) incorporated into the heterogeneous packaging of IBM’s smart and secure sensor platform. For cost effective μLEDs, the sapphire substrate needs to be singulated reliably and with minimum kerf perimeter, be ultra-clean and smooth to allow back side emission without scattering, and high yielding front side flip chip bonding with 20μm C4s on 40μm pitch. The GaN μLEDs are design for low voltage/low power operation with an emission area of 20μm × 20μm with critical current density of ~10nA/μm2. Power and downlink data is delivered to the system via optical energy harvesting by on-silicon carrier photovoltaics and communication photodiode, respectively. Optical amplitude modulated uplink communication by heterogeneous packaging of the GaN μLED with a 14nm CMOS smart chip will be detailed and demonstrated in presentation.

Back-side emission from filtered gold targets

1997 ◽  
Author(s):  
Stephen J. Moon ◽  
David C. Eder
Keyword(s):  
Back Side ◽  
Side Emission

Investigation of Multi-Level Metallization ULSls by Light Emission from the Back-Side and Front-Side of the Chip

1997 ◽  
Author(s):  
K. Naitoh ◽  
T. Ishii ◽  
J.-I. Mitsuhashi
Keyword(s):  
Light Emission ◽  
Failure Mechanisms ◽  
Photon Counting ◽  
Back Side ◽  
Front Side ◽  
Spectrum Measurement ◽  
Multi Level ◽  
Emission Microscopy ◽  
On Chip ◽  
Minimum Ratio

Abstract Advanced ASIC devices with multi-level metallization and high density DRAMs with lead-on-chip (LOC) packages are becoming more difficult to analyze using emission microscopy from the Front-side of the chip (Front-side EMS). In this paper, we have found that evaluation of the wavelength spectrum from the back-side of the chip (Back-side EMS) could be used as easily as Front-side EMS. We investigated the wavelength spectrum of light emitted from the backside of the chip and the front-side of the chip, and calculated a photon counting ratio of the Back-side EMS and Front-side EMS for several different failure mechanisms. The wavelength spectra also showed that all light emissions had a component of Infrared (IR) light with wavelength longer than 900nm. The minimum ratio in the various failure mechanisms is 40%. From these data, Back-side EMS can be applied to the analysis of various failure mechanisms. Although the thickness of silicon substrate using for the spectrum measurement is from 204um to 380um, the measured values are not affected by the thickness. Therefore, in the Back-side EMS, the light emission can be detected without strict control of chip thinning.

Chromatic Aberration Correction of Silicon Aplanatic Solid Immersion Lens for Photon Emission Microscopy of Integrated Circuits

2011 ◽  
Author(s):  
A. Yurt ◽  
E. Ramsay ◽  
F. H. Köklü ◽  
M. S. Ünlü ◽  
B. B. Goldberg
Keyword(s):  
Integrated Circuits ◽  
Optical Design ◽  
Photon Emission ◽  
Chromatic Aberration ◽  
Oxide Semiconductor ◽  
Objective Lens ◽  
Back Side ◽  
Solid Immersion Lens ◽  
Spectral Window ◽  
Emission Microscopy

Abstract We investigate a complementary objective lens design for correcting chromatic aberration in the use of a silicon aplanatic solid immersion lens for back-side photon emission microscopy of metal-oxide-semiconductor circuits. Our simulations demonstrate that the chromatic aberration due to material dispersion of aplanatic silicon solid immersion lenses can be reduced by more than an order of magnitude in the spectral window 1.5µm-2.1µm, providing new diffraction limited performance. On-axis and off-axis imaging performance of the proposed optical design is evaluated.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Field Effect Modulation of Electrocatalytic Hydrogen Evolution at Back-Gated Two-Dimensional MoS2 Electrodes

2019 ◽  
Author(s):  
Yan Wang ◽  
Sagar Udyavara ◽  
Matthew Neurock ◽  
C. Daniel Frisbie
Keyword(s):  
Electric Field ◽  
Hydrogen Evolution ◽  
Active Sites ◽  
Density Functional ◽  
Electrode Materials ◽  
Density Functional Theory Calculations ◽  
Electronic Charge ◽  
Back Side ◽  
Gate Electrode ◽  
Conventional Manner

<div> <div> <div> <p> </p><div> <div> <div> <p>Electrocatalytic activity for hydrogen evolution at monolayer MoS2 electrodes can be enhanced by the application of an electric field normal to the electrode plane. The electric field is produced by a gate electrode lying underneath the MoS2 and separated from it by a dielectric. Application of a voltage to the back-side gate electrode while sweeping the MoS2 electrochemical potential in a conventional manner in 0.5 M H2SO4 results in up to a 140-mV reduction in overpotential for hydrogen evolution at current densities of 50 mA/cm2. Tafel analysis indicates that the exchange current density is correspondingly improved by a factor of 4 to 0.1 mA/cm2 as gate voltage is increased. Density functional theory calculations support a mechanism in which the higher hydrogen evolution activity is caused by gate-induced electronic charge on Mo metal centers adjacent the S vacancies (the active sites), leading to enhanced Mo-H bond strengths. Overall, our findings indicate that the back-gated working electrode architecture is a convenient and versatile platform for investigating the connection between tunable electronic charge at active sites and overpotential for electrocatalytic processes on ultrathin electrode materials.</p></div></div></div><br><p></p></div></div></div>

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