A new interlayer dielectric (ILD) cracking mechanism in ceramic packaged multilayered CMOS devices

2002 ◽  
Author(s):  
Yeoh Eng Hong ◽  
Chong Aik Kean ◽  
R. Tay
Keyword(s):  
Interlayer Dielectric ◽  
Cracking Mechanism

Air Bridge Technology: A Comparison of Novel Interconnect Materials and Integration Schemes for Beyond 45 nm

2003 ◽  
Vol 766 ◽  
Author(s):  
Kenneth Foster ◽  
Joost Waeterloos ◽  
Don Frye ◽  
Steve Froelicher ◽  
Mike Mills
Keyword(s):  
Dielectric Constants ◽  
Advanced Technology ◽  
Effective Dielectric Constant ◽  
Device Performance ◽  
Interlayer Dielectric ◽  
Integration Schemes ◽  
Stepwise Reduction ◽  
Bridge Technology ◽  
Integrated Device ◽  
Compare And Contrast

AbstractThe electronics industry, in a continual drive for improved integrated device performance, is seeking increasingly lower dielectric constants (k) of the insulators that are used as interlayer dielectric (ILD) for advanced logic interconnects. As the industry continually seeks a stepwise reduction of the “effective” dielectric constant (keff), simple extendibility, leads to the consideration of the highest performance possible, namely air bridge technology. In this paper we will discuss requirements, integration schemes and properties for a novel class of materials that has been developed as part of an advanced technology probe into air bridge architecture. We will compare and contrast these potential technology offerings with other existing dense and porous ILD integration options, and show that the choice is neither trivial nor obvious.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

Electromigration and Electrochemical Reaction Mixed Failure Mechanism in Gold Interconnection System

1999 ◽  
Author(s):  
Hide Murayama ◽  
Makoto Yamazaki ◽  
Shigeru Nakajima
Keyword(s):  
Failure Mechanism ◽  
Failure Rate ◽  
Electrochemical Reaction ◽  
Dielectric Films ◽  
Failure Rates ◽  
Interlayer Dielectric ◽  
Bipolar Devices ◽  
Gold Metallization

Abstract Power bipolar devices with gold metallization experience high failure rates. The failures are characterized as shorts, detected during LSI testing at burn-in. Many of these shorted locations are the same for the failed devices. From a statistical lot analysis, it is found that the short failure rate is higher for devices with thinner interlayer dielectric films. Based upon these results, a new electromigration and electrochemical reaction mixed failure mechanism is proposed for the failure.

scholarly journals Interlayer dielectric function of a type-II van der Waals semiconductor: The HfS2/PtS2 heterobilayer

2019 ◽  
Vol 3 (12) ◽  
Author(s):  
Stefana Anais Colibaba ◽  
Sabine Körbel ◽  
Carlo Motta ◽  
Fedwa El-Mellouhi ◽  
Stefano Sanvito
Keyword(s):  
Dielectric Function ◽  
Van Der Waals ◽  
Type Ii ◽  
Interlayer Dielectric

Conceptualization of Three-Stage Fatigue Failure in Asphalt-Rubber Gap-Graded Mixtures using Dynamic Semi-Circular Bending Test

2020 ◽  
Vol 2674 (7) ◽  
pp. 44-55
Author(s):  
Veena Venudharan ◽  
Krishna Prapoorna Biligiri
Keyword(s):  
Failure Process ◽  
Mouth Opening ◽  
Fatigue Performance ◽  
Bending Test ◽  
Crack Mouth Opening Displacement ◽  
Fatigue Process ◽  
Structural Deterioration ◽  
Asphalt Rubber ◽  
Scb Test ◽  
Cracking Mechanism

The objective of this study was to qualitatively measure the cracking mechanism of asphalt-rubber gap-graded (AR-Gap) mixtures and compare the methodical approach proposed in this research with the conventional fatigue process. As part of experimentation plan, dynamic a semi-circular bending (SCB) test was conducted on 27 AR-Gap mixtures with varying mix parameters, including, binder type, binder content, and aggregate gradation. Fatigue life ( Nf) obtained from the dynamic SCB test was analyzed from a statistical viewpoint, and key relationships that potentially contribute to fatigue performance were identified. Later, crack mouth opening displacement (CMOD) was used to study the cracking mechanism of AR-Gap mixtures. CMOD data were analyzed using the Francken model that theorizes the accumulated damage as a three-stage failure. Further, fatigue tertiary life ( Nft) was determined on the premise of structural deterioration obtained from the three-stage failure process. The fatigue disparity factor (ξ), the ratio of Nf to Nft for each asphalt mix was estimated to compare fatigue performance indices. The score of ξ for all the mixtures exceeded 50%, which was indicative of longer crack initiation and crack propagation phase over the third stage of the fatigue cracking mechanism. Overall, the fatigue mechanism was explained through the conceptualization of the three-stage fatigue process through various intrinsic properties of AR-Gap mixtures.

Study of Chip–Package Interaction Parameters on Interlayer Dielectric Crack Propagation

2014 ◽  
Vol 14 (1) ◽  
pp. 57-65 ◽  
Author(s):  
Sathyanarayanan Raghavan ◽  
Ilko Schmadlak ◽  
George Leal ◽  
Suresh K. Sitaraman
Keyword(s):  
Crack Propagation ◽  
Interaction Parameters ◽  
Interlayer Dielectric ◽  
Dielectric Crack

Impact of Highly Compressive Interlayer-Dielectric-$ \hbox{SiN}_{x}$ Stressing Layer on $\hbox{1}/f$ Noise and Reliability of SiGe-Channel pMOSFETs

2010 ◽  
Vol 31 (12) ◽  
pp. 1368-1370 ◽  
Author(s):  
Yu-Ting Chen ◽  
Kun-Ming Chen ◽  
Wen-Shiang Liao ◽  
Guo-Wei Huang ◽  
Fon-Shan Huang
Keyword(s):  
Interlayer Dielectric

Application of SiO2 aerogel film for interlayer dielectric on GaAs with a barrier of Si3N4

2004 ◽  
Vol 447-448 ◽  
pp. 580-585 ◽  
Author(s):  
Sang-Bae Jung ◽  
Sung-Woo Park ◽  
Jun-Kyu Yang ◽  
Hyung-Ho Park ◽  
Haecheon Kim
Keyword(s):  
Interlayer Dielectric ◽  
Sio2 Aerogel
Sign in / Sign up

Export Citation Format

Share Document