Optimization of the current distribution in press-pack high power IGBT modules

2010 ◽  
Author(s):  
A. Musing ◽  
G. Ortiz ◽  
J. W. Kolar
Keyword(s):  
Current Distribution ◽  
High Power ◽  
Igbt Modules

Degradation mapping in high power IGBT modules using four-point probing

2015 ◽  
Vol 55 (8) ◽  
pp. 1196-1204 ◽  
Author(s):  
Kristian Bonderup Pedersen ◽  
Lotte Haxen Østergaard ◽  
Pramod Ghimire ◽  
Vladimir Popok ◽  
Kjeld Pedersen
Keyword(s):  
High Power ◽  
Igbt Modules

Reliability Improvement of Aluminum Wirebonds in High‐Power Igbt Modules

1996 ◽  
Vol 445 ◽  
Author(s):  
Yujing Wu ◽  
Gene Thome ◽  
Timothy Scott Savage
Keyword(s):  
Grain Size ◽  
Crack Initiation ◽  
High Power ◽  
Fatigue Testing ◽  
Temperature Cycling ◽  
Grain Structure ◽  
Aluminum Wire ◽  
Significant Deterioration ◽  
Temperature Cycles ◽  
Igbt Modules

AbstractWirebonding is the weakest area of device packaging of power IGBT modules. Accelerated thermal fatigue testing causes cracks to form and propagate in the aluminum wirebond at the foot area. This study examined the relationship of the wirebond reliability and the aluminum wire grain structure, which can be affected by post‐wirebond heat treatment. A series of wirebonded IGBTs were annealed at a temperature range from 280°C to 400°C for up to 60 minutes. Wirebond shear strengths versus temperature cycles were examined. Cross‐sectional SEM was used to examine both aluminum grain size development by annealing and crack initiation and propagation in the wirebonds after temperature cycling. It was found that aluminum grain size was increased by post‐wirebond annealing. With temperature cycling, the wirebond shear strengths of the as‐wirebonded samples decrease rapidly, and lifted wirebonds were present after 1500 temperature cycles. The lifted wirebonds typically break within the aluminum wire near the wire/metallization interface. The shear strength of the wirebonds with post‐wirebond annealing showed no significant change even after 5000 temperature cycles, and there were no signs of significant deterioration of the wirebonds either. The wirebond crack initiation and growth rates were depressed substantially by larger aluminum grains. Annealing of the aluminum wire after wirebonding provided increased aluminum grain size resulting in improved reliability of the wirebonds of high power modules.

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

2019 ◽  
Vol 34 (2) ◽  
pp. 1181-1196 ◽  
Author(s):  
Lei Zhang ◽  
Xibo Yuan ◽  
Xiaojie Wu ◽  
Congcong Shi ◽  
Jiahang Zhang ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
High Power ◽  
Igbt Modules
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