Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_{C}/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules

2017 ◽  
Vol 32 (8) ◽  
pp. 6394-6404 ◽  
Author(s):  
Yuxiang Chen ◽  
Haoze Luo ◽  
Wuhua Li ◽  
Xiangning He ◽  
Francesco Iannuzzo ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
High Power ◽  
Electrical Parameter ◽  
Igbt Modules

Experimental Investigation of Limits to Slow Axis Beam Quality in High Power Broad Area Diode Lasers

2014 ◽  
Author(s):  
M. Winterfeldt ◽  
P. Crump ◽  
H. Wenzel ◽  
G. Erbert ◽  
G. Trankle
Keyword(s):  
Experimental Investigation ◽  
High Power ◽  
Beam Quality ◽  
Diode Lasers ◽  
Broad Area ◽  
Slow Axis

Experimental Investigation of High Power Erbium–Ytterbium Co-doped Double Clad Fibre Laser

2004 ◽  
Vol 21 (12) ◽  
pp. 2426-2428 ◽  
Author(s):  
Li Li-Jun ◽  
Feng Xin-Huan ◽  
Liu Yan-Ge ◽  
Li Yao ◽  
Yuan Shu-Zhong ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
High Power ◽  
Fibre Laser ◽  
Co Doped

Degradation mapping in high power IGBT modules using four-point probing

2015 ◽  
Vol 55 (8) ◽  
pp. 1196-1204 ◽  
Author(s):  
Kristian Bonderup Pedersen ◽  
Lotte Haxen Østergaard ◽  
Pramod Ghimire ◽  
Vladimir Popok ◽  
Kjeld Pedersen
Keyword(s):  
High Power ◽  
Igbt Modules

Experimental investigation on lifetime of high power GaAs photoconductive semiconductor switch

2010 ◽  
Vol 22 (4) ◽  
pp. 795-798
Author(s):  
刘宏伟 Liu Hongwei ◽  
袁建强 Yuan Jianqiang ◽  
刘金锋 Liu Jinfeng ◽  
李洪涛 Li Hongtao ◽  
谢卫平 Xie Weiping ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
High Power ◽  
Semiconductor Switch

Reliability Improvement of Aluminum Wirebonds in High‐Power Igbt Modules

1996 ◽  
Vol 445 ◽  
Author(s):  
Yujing Wu ◽  
Gene Thome ◽  
Timothy Scott Savage
Keyword(s):  
Grain Size ◽  
Crack Initiation ◽  
High Power ◽  
Fatigue Testing ◽  
Temperature Cycling ◽  
Grain Structure ◽  
Aluminum Wire ◽  
Significant Deterioration ◽  
Temperature Cycles ◽  
Igbt Modules

AbstractWirebonding is the weakest area of device packaging of power IGBT modules. Accelerated thermal fatigue testing causes cracks to form and propagate in the aluminum wirebond at the foot area. This study examined the relationship of the wirebond reliability and the aluminum wire grain structure, which can be affected by post‐wirebond heat treatment. A series of wirebonded IGBTs were annealed at a temperature range from 280°C to 400°C for up to 60 minutes. Wirebond shear strengths versus temperature cycles were examined. Cross‐sectional SEM was used to examine both aluminum grain size development by annealing and crack initiation and propagation in the wirebonds after temperature cycling. It was found that aluminum grain size was increased by post‐wirebond annealing. With temperature cycling, the wirebond shear strengths of the as‐wirebonded samples decrease rapidly, and lifted wirebonds were present after 1500 temperature cycles. The lifted wirebonds typically break within the aluminum wire near the wire/metallization interface. The shear strength of the wirebonds with post‐wirebond annealing showed no significant change even after 5000 temperature cycles, and there were no signs of significant deterioration of the wirebonds either. The wirebond crack initiation and growth rates were depressed substantially by larger aluminum grains. Annealing of the aluminum wire after wirebonding provided increased aluminum grain size resulting in improved reliability of the wirebonds of high power modules.

Sign in / Sign up

Export Citation Format

Share Document