Simulation parameter effects on critical dimension and sensitivity of 193 nm Chemically Amplified Resist

Author(s):  
Sang-Kon Kim ◽  
Dong-Soo Sohn ◽  
Eun-Jung Seo ◽  
Jin-Young Kim ◽  
Young-Soo Sohn ◽  
...  
2001 ◽  
Author(s):  
Eun-Jung Seo ◽  
Young-Soo Sohn ◽  
Heungin Bak ◽  
Hye-Keun Oh ◽  
Sang-Gyun Woo ◽  
...  

2002 ◽  
Author(s):  
Teruhiko Kumada ◽  
Atsuko Sasahara ◽  
Kazuyuki Maetoko ◽  
Kunihiro Hosono ◽  
Takemichi Honma ◽  
...  

1999 ◽  
Vol 584 ◽  
Author(s):  
Elsa Reichmanis ◽  
Omkaram Nalamasu ◽  
Francis M. Houlihan ◽  
Allen H. Gabor ◽  
Mark O. Neisser ◽  
...  

AbstractAdvances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the electronics industry and are continuing to help push the ultimate limits of optical lithography. The challenges posed by the introduction of new optical lithography technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 nm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning ≤ 0.1 μm design rule devices in future fabs.


1995 ◽  
Author(s):  
Makoto Takahashi ◽  
Satoshi Takechi ◽  
Yuko Kaimoto ◽  
Isamu Hanyu ◽  
Naomichi Abe ◽  
...  

2000 ◽  
Author(s):  
Young-Mi Lee ◽  
Moon-Gyu Sung ◽  
Eun-Mi Lee ◽  
Young-Soo Sohn ◽  
Heungin Bak ◽  
...  

2003 ◽  
Author(s):  
Teruhiko Kumada ◽  
Koji Tange ◽  
Kazuyuki Maetoko ◽  
Kunihiro Hosono ◽  
Masayoshi Tsuzuki ◽  
...  

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