Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance

2007 ◽  
Vol 25 (6) ◽  
pp. 2136 ◽  
Author(s):  
Cheng-Tsung Lee ◽  
Clifford L. Henderson ◽  
Mingxing Wang ◽  
Kenneth E. Gonsalves ◽  
Wang Yueh
Keyword(s):  
Main Chain ◽  
Polymer Main Chain ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm ◽  
Photoacid Generator

Modification of development parameters of 193-nm chemically amplified resist with pattern density

2001 ◽  
Author(s):  
Eun-Jung Seo ◽  
Young-Soo Sohn ◽  
Heungin Bak ◽  
Hye-Keun Oh ◽  
Sang-Gyun Woo ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Pattern Density ◽  
Chemically Amplified Resist ◽  
193 Nm

Lithographic Materials Technologies: 193 nm Imaging and Beyond

1999 ◽  
Vol 584 ◽  
Author(s):  
Elsa Reichmanis ◽  
Omkaram Nalamasu ◽  
Francis M. Houlihan ◽  
Allen H. Gabor ◽  
Mark O. Neisser ◽  
...  
Keyword(s):  
Resolution Enhancement ◽  
Electronics Industry ◽  
Optical Lithography ◽  
Design Rule ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm ◽  
Productivity Gains

AbstractAdvances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the electronics industry and are continuing to help push the ultimate limits of optical lithography. The challenges posed by the introduction of new optical lithography technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 nm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning ≤ 0.1 μm design rule devices in future fabs.

The effect of direct PAG incorporation into the polymer main chain on reactive ion etch resistance of 193nm and EUV chemically amplified resists

2008 ◽  
Vol 85 (5-6) ◽  
pp. 963-965 ◽  
Author(s):  
Cheng-Tsung Lee ◽  
Clifford L. Henderson ◽  
Mingxing Wang ◽  
Kenneth E. Gonsalves ◽  
Wang Yueh ◽  
...  
Keyword(s):  
Main Chain ◽  
Polymer Main Chain ◽  
Chemically Amplified ◽  
Chemically Amplified Resists

Incorporation of ionic photoacid generator (PAG) and base quencher into the resist polymer main chain for sub-50 nm resolution patterning

2008 ◽  
Vol 18 (23) ◽  
pp. 2704 ◽  
Author(s):  
Mingxing Wang ◽  
Cheng-Tsung Lee ◽  
Clifford L. Henderson ◽  
Wang Yueh ◽  
Jeanette M. Roberts ◽  
...  
Keyword(s):  
Main Chain ◽  
Polymer Main Chain ◽  
Photoacid Generator

Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography

1995 ◽  
Author(s):  
Makoto Takahashi ◽  
Satoshi Takechi ◽  
Yuko Kaimoto ◽  
Isamu Hanyu ◽  
Naomichi Abe ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm

Temperature rising effect of 193-nm chemically amplified resist during postexposure bake

2000 ◽  
Author(s):  
Young-Mi Lee ◽  
Moon-Gyu Sung ◽  
Eun-Mi Lee ◽  
Young-Soo Sohn ◽  
Heungin Bak ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm
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